NEC NE76084-T1

DATA SHEET
GaAs MES FET
NE76084
C to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
FEATURES
PACKAGE DIMENSIONS
(Unit: mm)
• Low noise figure & High associated gain
NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz
1.78 ± 0.2
• Gate length: L g = 0.3 µ m
• Gate width : W g = 280 µ m
L
L
LEAD LENGTH
NE76084-SL
STICK
L = 1.7 mm MIN.
NE76084-T1
Tape & reel
1000 pcs./reel
L = 1.0 ± 0.2 mm
Tape & reel
5000 pcs./reel
L = 1.0 ± 0.2 mm
NE76084-T1A
MARKING
E
2
4
E
L
L
3
0.5 TYP.
Drain to Source Voltage
V DS
5.0
V
Gate to Source Voltage
V GS
–3.0
V
Gate to Drain Voltage
V GD
–5.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
P tot
240
mW
Channel Temperature
T ch
175
°C
Storage Temperature
T stg
–65 to +175
°C
0.1
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)
1.7 MAX.
SUPPLYING
FORM
1.78 ± 0.2
ORDERING INFORMATION
PART NUMBER
0.5 TYP.
1
1. Source
2. Drain
3. Source
4. Gate
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PART NUMBER
NE76084
NE76084-2.4
PACKAGE CODE
84
84
CHARACTERISTIC
SYMBOL
Gate to Source Leak Current
I GSO
Saturated Drain Current
I DSS
Gate to Source Cutoff Voltage
V GS(off)
Transconductance
gm
Noise Figure
NF
Associated Gain
Ga
Document No. P11843EJ2V0DS00 (2nd edition)
(Previous No. TC-2259)
Date Published August 1996 P
Printed in Japan
MIN.
TYP.
MAX.
MIN.
TYP.
10
UNIT
TEST CONDITIONS
MAX.
10
µA
V GS = –4 V
V DS = 3 V, VGS = 0 V
15
30
50
15
30
50
mA
–0.5
–0.8
–3.0
–0.5
–0.8
–3.0
V
V DS = 3 V, I DS = 100 µ A
30
40
70
30
40
70
mS
V DS = 3 V, I DS = 10 mA
1.6
1.8
1.8
2.4
dB
V DS = 3 V, I DS = 10 mA
dB
f = 12 GHz
8.0
9.0
8.0
9.0
©
1989
NE76084
TYPICAL CHARACTERISTICS (T A = 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
40
ID-Drain Current-mA
Ptot-Total Power Dissipation-mW
300
200
100
VGS = 0 V
30
–0.2 V
20
–0.4 V
10
0
50
100
150
TA-Ambient Temperature-°C
200
–0.6 V
0
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAG.-Maximum Available Gain-dB
MSG.-Maximum Stable Gain-dB
S21s2-Forward Insertion Gain-dB
ID-Drain Current-mA
40
30
20
10
VDS = 3 V
ID = 10 mA
20
MSG.
16
–1.0
0
VGS-Gate to Source Voltage-V
Gain Calculations
|S 21|
K=
|S 12|
|S 21|
|S 12|
(K ±
K 2 – 1)
1 + | ∆ | 2 – |S 11| 2 – |S 22| 2
2 |S 12| |S 21 |
∆ = S11·S 22 – S21·S12
MAG.
12
S21s
2
8
0
0
–2.0
2
5
24
VDS = 3 V
MAG. =
2
3
4
VDS-Drain to Source Voltage-V
TYPICAL GAIN vs. FREQUENCY
50
MSG. =
1
1
2
4
6
f-Frequency-GHz
8 10
20
NE76084
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
24
2.5
VDS = 3 V
ID = 10 mA
15
VDS = 3 V
f = 12 GHz
2.0
12
1.0
8
2.0
10
Ga
NF
1.5
Ga-Associated Gain-dB
16
Ga
NF-Noise Figure-dB
3.0
Ga-Associated Gain-dB
NF-Noise Figure-dB
20
5
NF
0
1
2
4
6
8 10
f-Frequency-GHz
14
4
20 30
0
5
10
15
20
25
ID-Drain Current-mA
3
NE76084
Marker
1: 500 MHz
2: 4 GHz
3: 8 GHz
4: 12 GHz
5: 16 GHz
6: 18 GHz
S-PARAMETERS
V DS = 3 V, I D = 10 mA
START 500 MHz, STOP 18 GHz, STEP 500 MHz
S11
S12
1.0
90°
0.5
2
135°
45°
6
5
2
0.5
0
1.0
∞
3
1
±180°
0°
4
4
1
5
6
3
–135°
–0.5
–45°
–2
2
–1.0
–90°
Rmax. = 1
Rmax. = 0.2
S21
S22
90°
1.0
0.5
135°
2
45°
2
6
3
5
1
4
±180°
0°
0
0.5
1.0
∞
4
5
6
1
3
2
–135°
–45°
–2
–0.5
–1.0
–90°
Rmax. = 5.0
4
Rmax. = 1
NE76084
S-PARAMETERS
V DS = 3 V, I D = 10 mA
FREQUENCY
MHz
MAG.
S 11
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
0.997
0.989
0.977
0.960
0.942
0.923
0.902
0.879
0.857
0.834
0.812
0.792
0.773
0.756
0.742
0.728
0.714
0.700
0.687
0.673
0.658
0.644
0.630
0.617
0.605
0.592
0.580
0.566
0.552
0.537
0.519
0.500
0.480
0.461
0.441
0.422
S 21
ANG.
(deg.)
–9.4
–18.5
–27.6
–36.4
–44.9
–53.4
–61.7
–69.8
–77.6
–85.3
–92.8
–99.9
–106.6
–113.0
–119.1
–124.8
–130.3
–135.8
–141.1
–146.6
–151.9
–157.4
–162.9
–168.4
–173.7
–179.1
175.6
170.3
164.7
158.9
152.7
146.2
139.0
131.4
123.4
114.4
MAG.
2.917
2.890
2.853
2.802
2.749
2.694
2.638
2.571
2.507
2.437
2.371
2.299
2.231
2.167
2.106
2.054
2.004
1.963
1.927
1.891
1.858
1.826
1.792
1.765
1.736
1.710
1.688
1.671
1.658
1.642
1.634
1.617
1.607
1.596
1.579
1.566
S 12
ANG.
(deg.)
170.5
161.3
152.2
143.4
134.8
126.3
118.0
109.8
101.8
94.1
86.4
79.1
71.9
65.0
58.4
51.9
45.5
39.2
33.0
26.7
20.5
14.3
8.1
2.1
–4.0
–10.0
–16.0
–22.2
–28.2
–34.6
–41.0
–47.5
–54.2
–61.0
–67.9
–75.1
MAG.
0.012
0.023
0.034
0.044
0.053
0.062
0.069
0.075
0.081
0.085
0.089
0.092
0.094
0.095
0.096
0.097
0.098
0.099
0.100
0.102
0.102
0.104
0.105
0.107
0.108
0.110
0.113
0.116
0.119
0.123
0.126
0.130
0.134
0.138
0.142
0.145
S 22
ANG.
(deg.)
83.2
76.9
70.6
64.6
58.9
53.3
47.9
42.8
38.0
33.5
29.2
25.0
21.5
18.2
15.2
12.7
10.3
8.2
6.3
4.3
2.2
0.5
–1.3
–3.0
–4.6
–6.6
–8.5
–10.6
–13.3
–15.9
–19.1
–22.6
–26.4
–30.9
–35.5
–40.6
MAG.
0.620
0.615
0.607
0.596
0.584
0.571
0.556
0.541
0.524
0.509
0.493
0.482
0.468
0.460
0.452
0.446
0.443
0.438
0.438
0.435
0.437
0.436
0.438
0.441
0.446
0.456
0.461
0.473
0.480
0.494
0.505
0.514
0.526
0.536
0.551
0.561
ANG.
(deg.)
–7.0
–13.9
–20.8
–27.4
–34.1
–40.8
–47.2
–54.0
–60.4
–67.0
–73.8
–80.5
–87.4
–93.9
–100.6
–107.1
–113.7
–119.7
–126.2
–133.0
–139.7
–146.8
–153.5
–160.4
–167.3
–173.8
–180.0
174.2
167.8
162.3
155.5
149.9
143.4
136.9
130.9
124.2
5
NE76084
AMP. PARAMETERS
V DS = 3 V, I D = 10 mA
FREQUENCY
MHz
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
6
GUmax.
dB
33.02
27.83
24.50
21.87
20.08
18.61
17.32
16.14
15.13
14.20
13.39
12.66
12.01
11.44
10.93
10.48
10.09
9.71
9.40
9.06
8.76
8.47
8.19
7.96
7.73
7.55
7.37
7.24
7.11
7.00
6.91
6.76
6.67
6.57
6.48
6.39
GAmax.
dB
11.93
11.21
10.66
10.23
9.84
9.56
9.29
9.13
8.95
8.85
8.76
8.73
8.67
8.52
8.47
8.39
8.34
8.24
|S 21 | 2
dB
9.30
9.22
9.11
8.95
8.78
8.61
8.42
8.20
7.98
7.74
7.50
7.23
6.97
6.72
6.47
6.25
6.04
5.86
5.70
5.53
5.38
5.23
5.07
4.94
4.79
4.66
4.55
4.46
4.39
4.31
4.27
4.17
4.12
4.06
3.97
3.90
|S 12| 2
dB
–38.67
–32.75
–29.44
–27.17
–25.50
–24.22
–23.24
–22.47
–21.87
–21.38
–21.02
–20.76
–20.55
–20.42
–20.33
–20.25
–20.16
–20.08
–19.99
–19.85
–19.80
–19.68
–19.58
–19.45
–19.32
–19.16
–18.96
–18.75
–18.50
–18.21
–17.98
–17.70
–17.43
–17.18
–16.98
–16.78
K
0.08
0.13
0.19
0.25
0.30
0.35
0.40
0.46
0.52
0.57
0.63
0.69
0.75
0.80
0.85
0.90
0.94
0.99
1.02
1.06
1.10
1.13
1.17
1.19
1.21
1.21
1.22
1.21
1.20
1.17
1.16
1.16
1.14
1.13
1.12
1.12
Delay
ns
0.051
0.051
0.051
0.049
0.048
0.047
0.046
0.046
0.044
0.043
0.043
0.041
0.040
0.038
0.037
0.036
0.035
0.035
0.034
0.035
0.034
0.034
0.034
0.033
0.034
0.033
0.033
0.034
0.034
0.035
0.036
0.036
0.037
0.038
0.038
0.040
Mason’s U
dB
35.846
32.671
30.124
27.520
26.456
25.794
24.722
23.833
23.043
22.182
21.487
20.671
20.221
19.654
19.247
18.929
18.779
18.378
18.331
17.972
17.332
16.850
16.224
15.764
15.275
15.008
14.639
14.410
14.165
14.046
13.754
13.255
12.958
12.636
12.338
11.963
G1
dB
21.62
16.55
13.39
11.02
9.48
8.29
7.30
6.44
5.75
5.16
4.68
4.28
3.96
3.69
3.47
3.27
3.10
2.93
2.77
2.62
2.47
2.33
2.20
2.08
1.98
1.87
1.78
1.68
1.58
1.48
1.36
1.25
1.14
1.04
0.94
0.85
G2
dB
2.10
2.06
2.00
1.91
1.81
1.71
1.60
1.50
1.39
1.30
1.21
1.15
1.08
1.03
0.99
0.96
0.95
0.93
0.93
0.91
0.92
0.91
0.92
0.94
0.96
1.01
1.04
1.10
1.14
1.21
1.28
1.33
1.41
1.47
1.57
1.64
NE76084
NOISE PARAMETERS
<Γ opt. vs. frequency>
1
0.6
2
VDS = 3 V
ID = 10 mA
2 GHz
5
∞
2
1
0.6
0
0.2
0.2
18 GHz
–0.2
–5
–2
–0.6
–1
Start 2 GHz, Stop 18 GHz, Step 2 GHz
<Noise Parameter>
V DS = 3 V, I D = 10 mA
Γ opt.
Freq.
(dB)
NF MIN.
(dB)
Ga
(dB)
MAG.
2.0
0.55
16.9
0.88
31
0.51
4.0
0.62
14.0
0.72
69
0.46
6.0
0.81
12.3
0.60
107
0.37
8.0
1.10
11.0
0.52
148
0.32
10.0
1.25
10.1
0.46
–175
0.26
12.0
1.60
9.0
0.45
–138
0.21
14.0
1.90
8.1
0.45
–104
0.17
16.0
2.25
7.6
0.45
–78
0.11
18.0
2.75
7.0
0.48
–52
0.10
Rn/50
ANG. (deg.)
7
NE76084
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 °C or below,
Reflow time: 30 seconds or below (210 °C or higher),
Number of reflow process: 1, Exposure limit*: None
IR30-00
Partial heating method
Terminal temperature: 230 °C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
* Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 °C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs
shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese low concerned.
Keep the law concerned and so on, especially in case of removal.
8
NE76084
[MEMO]
9
NE76084
[MEMO]
10
NE76084
[MEMO]
11
NE76084
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
12