NEC NNCD6.2LH

DATA SHEET
ESD NOISE CLIPPING DIODES
NNCD5.6LH to NNCD6.8LH
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN SUPER SMALL MINI MOLD
PACKAGE DIMENSIONS
This product series is a low capacitance type diode developed
(in millimeters)
for ESD (Electrostatic Discharge) absorption. Based on the
2.1 ± 0.1
1.25
IEC1000-4-2 test on electromagnetic interference (EMI), the
diode assures an endurance of no less than 8 kV, and capacitance
2
5
+0.1
With four elements mounted in the 5-pin super mini mold
package, that product can cope with more high density assembling.
1
0.2 –0
2.0 ± 0.2
communication bus such as USB.
0.65
the most suitable for the ESD absorption in the high-speed data
0.65
is small with 10 pF between the terminal. This product series is
3
4
FEATURES
• Capacitance is small with 10 pF (at VR = 0 V, f = 1 MHz)
It is excellent in the frequency
+0.1
0 to 0.1
between the terminal.
0.15 –0.05
4-2), the product assures the minimum endurance of 8 kV.
0.7
0.9 ± 0.1
• Based on the electrostatic discharge immunity test (IEC1000-
characteristic.
• With 4 elements mounted (common anode) in the 5-pin super
(5-pin super mini mold)
mini mold package, that product can cope with more high
density assembling.
PIN CONNECTION
APPLICATIONS
• External interface circuit ESD absorption in the high-speed
5
4
data communication bus such as USB.
1
2
3
1:
2:
3:
4:
5:
K1
A
K2
K3
K4
Cathode 1
Anode (Common)
Cathode 2
Cathode3
Cathode4
MAXIMUM RATINGS (T A = 25°C)
Power Dissipation
P
200 mW
(Total)
Surge Reverse Power
PRSM
2W (t = 10 µs, 1 pulse)
Fig.5
Junction Temperature
Tj
150°C
Storage Temperature
Tstg
–55°C to +150°C
Document No. D12786EJ1V0DS00 (1st edition)
Date Published October 1998 N CP(K)
Printed in Japan
©
1998
NNCD5.6LH to NNCD6.8LH
ELECTRICAL CHARACTERISTICS (T A = 25 °C) (A-K1, A-K2, A-K3, A-K4)
Breakdown VoltageNote 1
Type No
VBR (V)
DynamicNote 2
Reverse
Impedance
Zz (Ω)
Leakage
IR (µA)
Capacitance
ESD VoltageNote 3
Ct (pF)
(kV)
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
TYP.
Test Condition
MIN.
Test Condition
NNCD5.6LH
5.3
6.3
5
80
5
5
2.5
10
8
NNCD6.2LH
5.7
6.7
5
50
5
2
3.0
8
VR = 0 V
f = 1 MHz
NNCD6.8LH
6.2
7.1
5
30
5
2
3.5
7
C = 150 pF
R = 330 Ω
Contact
discharge
8
8
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT given a small A.C. signal.
3. ESD voltage is measured based on the IEC1000-4-2 test on electromagnetic interference (EMI).
2
NNCD5.6LH to NNCD6.8LH
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. P - TA RATING
Figure 2. It - VBR CHARACTERISTICS
250
NNCD5.6LH NNCD6.2LH NNCD6.8LH
200
10 m
100
50
0
100
125
25
50
75
TA - Ambient Temperature - °C
0
150
IT - On state Current - A
150
1m
100
10
1
100 n
10 n
4
5
7
6
8
VBR - Breakdown Voltage - V
Figure 3. Ct - VR CHARACTERISTICS
10.0
Ct - Capacitance between the terminal - pF
P - Power Dissipation - mW
(A - K1, A - K2, A - K3, A - K4)
f = 1 MHz
8.0
NNCD5.6LH
6.0
NNCD6.2LH
NNCD6.8LH
4.0
0.1
1.0
10
VR - Reverse Voltage - V
3
NNCD5.6LH to NNCD6.8LH
Figure 4. TRANSIENT THERMAL IMPEDANCE
1000
Zth - Transient Thermal Impedance - (°C/W)
625°C/W
NNCD [ ] LH
100
10
1
0.1
1m
10 m
100 m
1
10
100
t - Time - s
Figure 5. SURGE REVERSE POWER RATING
1000
PRSM - Surge Reverse Power - W
PRSM
TA = 25°C
Nom - Repetive
10
NNCD [ ] LH
1
0.1
1µ
10 µ
100 µ
1m
tT - Pulse Width - s
4
tT
100
10 m
100 m
NNCD5.6LH to NNCD6.8LH
REFERENCE
Document
Document No.
NEC semiconductor device reliability/quality control system
C11745E
NEC semiconductor device reliability/quality control system
MEI - 1201
Quality grade on NEC semiconductor device
C11531E
Semiconductor device mounting technology manual
C10535E
5
NNCD5.6LH to NNCD6.8LH
[MEMO]
6
NNCD5.6LH to NNCD6.8LH
[MEMO]
7
NNCD5.6LH to NNCD6.8LH
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5