DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 2.5 • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. 10 MIN. 10 FEATURES ORDERING INFORMATION Part Number Package Quality Grade µPA1437H 10 Pin SIP Standard 1.4 1.4 0.5 ±0.1 2.54 0.6 ±0.1 1 2 3 4 5 6 7 8 9 10 Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. CONNECTION DIAGRAM 3 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage VCBO –100 V Collector to Emitter Voltage VCEO –100 V Emitter to Base Voltage VEBO –7 V Collector Current (DC) IC(DC) m3 A/unit Collector Current (pulse) IC(pulse)* m6 A/unit Base Current (DC) IB(DC) –0.3 A/unit Total Power Dissipation PT1** 3.5 W Total Power Dissipation PT2*** 28 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % 2 5 4 7 6 9 8 1 10 (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 (B) R1 . R1 = . 8.3 kΩ . R2 = . 600 Ω R2 (E) ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3516 Date Published September 1994 P Printed in Japan © 1994 µPA1437 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. Collector to Emitter Sustaining Voltage VCEO(SUS) –100 Collector Leakage Current ICBO Emitter Leakage Current IEBO DC Current Gain hFE1 * 1000 DC Current Gain hFE2 * 2000 Collector Saturation Voltage VCE(sat) * –0.9 Base Saturation Voltage VBE(sat) * –1.5 Turn On Time ton Storage Time tstg Fall Time tf MAX. UNIT TEST CONDITIONS V IC = –1.5 A, IB = –1.5 mA, L = 1 mH –10 µA VCB = –100 V, IE = 0 –1 mA VEB = –5 V, IC = 0 — VCE = –2 V, IC = –0.5 A 20000 — VCE = –2 V, IC = –1.5 A –1.2 V IC = –1.5 A, IB = –1.5 mA –2 V IC = –1.5 A, IB = –1.5 mA 1 µs 3 µs 1 µs IC = –1.5 IB1 = –IB2 VCC =.. 50 See test A = –1.5 mA V, R L =.. 33 Ω circuit * PW ≤ 350 µ s, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT . RL =. 33 Ω VIN IB1 IB2 PW . 50 µ s PW = . Duty Cycle ≤ 2 % 2 . 5V VBB = . IC T.U.T. Base Current Wave Form IB2 IB1 . –50 V VCC = . Collector Current Wave Form 10 % IC 90 % ton tstg tf µPA1437 TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA IC(pulse) MAX. –5 ite d at ip io n 40 –0.5 Li –0.1 m d i te VCEO MAX. IC - Collector Current - A im 60 –1 µ bL µ S/ Di Lim ssip ite atio n d = 30 10 0 s 30 0 s 1 m s s 5 S/ 0 m b s Li m ite d µ 80 PW IC(DC) MAX. 100 ss Di dT - Percentage of Rated Current - % –10 –0.05 20 TC = 25 ˚C Single Pulse –0.01 0 50 100 150 TC - Case Temperature - ˚C –1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE –5 –10 –50 VCE - Collector to Emitter Voltage - V –100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 Ta - Ambient Temperature - ˚C PT - Total Power Dissipation - W PT - Total Power Dissipation - W 30 NEC µ PA1437 150 3 Circuits Operation 2 Circuits Operation 10 0 125 ˚C 75 ˚C 25 ˚C Ta = –25 ˚C 1000 100 –0.01 –0.1 –1.0 IC - Collector Current - A –10 50 75 100 125 TC - Case Temperature - ˚C –100 VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Saturation Voltage - V hFE - DC Current Gain 10000 VCE = –2.0 V Pulsed 25 150 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 100000 1 Circuit Operation 20 IC = 1000·IB Pulsed –10 VBE (sat) –1.0 –0.1 –0.01 VCE (sat) –0.1 –1.0 IC - Collector Current - A –10 3 µPA1437 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 100 –5.0 VCE ≤ 10 V IC - Collector Current - A Rth (j-c) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE 10 1 –4.0 –3.0 –2.0 –1.0 0.1 0.1 1 10 PW - Pulse Width - ms 100 0 –350 –300 –250 –500 –450 –400 –200 –150 –100 IB = –50 µ A –1.0 –2.0 –3.0 –4.0 VCE - Collector to Emitter Voltage - V –5.0 µPA1437 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1437 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6