NEC UPA1456

DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1456
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSION
The µPA1456 is NPN silicon epitaxial Darlington
(in millimeters)
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
26.8 MAX.
4.0
2.5
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
MIN.
10
FEATURES
ORDERING INFORMATION
Part Number
Package
Quality Grade
µPA1456H
10 Pin SIP
Standard
1.4
1.4
0.5 ±0.1
2.54
0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
CONNECTION DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
±5
A/unit
Collector Current (pulse)
IC(pulse)* ±10
A/unit
2
5
4
7
6
9
8
1
10
(C)
Base Current (DC)
IB(DC)
0.5
A/unit
PIN No.
Total Power Dissipation
PT1**
3.5
W
Total Power Dissipation
PT2***
28
W
2, 4, 6, 8 : Base (B)
3, 5, 7, 9 : Collector (C)
: Emitter (E)
1, 10
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
(B)
R1
.
R1 =
. 3.0 kΩ
.
R2 =
. 300 Ω
R2
(E)
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
The information in this document is subject to change without notice.
Document No. IC-3521
(O. D. No. IC-6340)
Date Published September 1994 P
Printed in Japan
©
1994
µPA1456
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
10
µA
VCB = 100 V, IE = 0
10
mA
VEB = 5 V, IC = 0
20000
—
VCE = 2 V, IC = 2 A
—
VCE = 2 V, IC = 4 A
1.5
V
IC = 2 A, IB = 2 mA
2
V
IC = 2 A, IB = 2 mA
1
µs
tstg
3
µs
tf
1
µs
IC = 2 A
IB1 = –IB2 = 2 mA
VCC =.. 50 V, R L =.. 25 Ω
See test circuit
Collector Leakage Current
ICBO
Emitter Leakage Current
IEBO
DC Current Gain
hFE1
*
2000
7000
DC Current Gain
hFE2
*
500
3000
Collector Saturation Voltage
VCE(sat) *
0.9
Base Saturation Voltage
VBE(sat) *
1.6
Turn On Time
ton
Storage Time
Fall Time
TEST CONDITIONS
* PW ≤ 350 µ s, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
RL = 25 Ω
VIN
IB2
PW
. 50 µ s
PW =
.
Duty Cycle ≤ 2 %
2
IC
IB1
Base Current
Wave Form
IB1
IB2
T.U.T.
. –5 V
VBB =
.
. 50 V
VCC =
.
Collector
Current
Wave Form
90 %
IC
10 %
ton
tstg tf
µPA1456
TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
SAFE OPERATING AREA
PW
at
ip
io
n
40
1
0.5
Li
m
d
i te
VCEO MAX.
IC - Collector Current - A
d
µs
ite
5 im
bL
S/
60
2
10 ms ted
i
0
im
0
bL
s
1m s
3 m ms
S/
D
Li issi
m pa
ite ti
d on
30
80
=
5
100
ss
Di
dT - Percentage of Rated Current - %
10
20
0.2
Single Pulse
0.1
50
100
150
TC - Case Temperature - ˚C
0
1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
5
10
50
20
VCE - Collector to Emitter Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
4 Circuits Operation
4
4 Circuits Operation
3 Circuits Operation
3
2 Circuits Operation
1 Circuit Operation
2
1
0
25
50
75
100
125
Ta - Ambient Temperature - ˚C
PT - Total Power Dissipation - W
PT - Total Power Dissipation - W
30
NEC
µ PA1456
150
3 Circuits Operation
2 Circuits Operation
10
0
VCE (sat) - Collector Saturation Voltage - V
hFE - DC Current Gain
10
VCE = 2.0 V
Pulse Test
10000
1000
T
=
a
C
5˚
12 5 ˚C
7 ˚C
25 ˚C
5
–2
100
10
0.01
0.1
1
IC - Collector Current - A
10
25
50
75
100
125
TC - Case Temperature - ˚C
150
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs. COLLECTOR CURRENT
100000
1 Circuit Operation
20
IC = 1000·IB
Pulse Test
1
Ta = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
0.1
0.1
1
IC - Collector Current - A
–10
3
µPA1456
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
100
10
1.0
0.1
0.1
1
10
PW - Pulse Width - ms
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC - Collector Current - A
2.0
5
4
4
1.
1.0
0.8
0.6
0.4
3
2
IB = 0.2 mA
1
0
4
10
VCE ≤ 10 V
VBE (sat) - Base Saturation Voltage - V
Rth (j-c) - Transient Thermal Resistance - ˚C/W
TRANSIENT THERMAL RESISTANCE
1
2
3
4
VCE - Collector to Emitter Voltage - V
5
IC = 1000·IB
Pulse Test
1
0.1
0.1
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1
IC - Collector Current - A
10
µPA1456
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
5
µPA1456
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6