DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor (in millimeters) Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 • Easy mount by 0.1 inch of terminal interval. • High hFE. Low VCE(sat). 2.5 hFE = 100 to 400 (at IC = –2 A) 10 MIN. 10 FEATURES VCE(sat) = –0.3 V MAX. (at IC = –2 A) 1.4 ORDERING INFORMATION Part Number Package Quality Grade µPA1453H 10 Pin SIP Standard 1.4 0.5 ±0.1 2.54 0.6 ±0.1 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) 5 4 7 6 10 VCBO –60 V Collector to Emitter Voltage VCEO –60 V PIN No. Emitter to Base Voltage VEBO –7 V 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 IC(DC) –5 A/unit Collector Current (pulse) IC(pulse)* –10 A/unit Base Current (DC) IB(DC) –1.0 A/unit Total Power Dissipation PT1** 3.5 W Total Power Dissipation PT2*** 28 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C 8 1 Collector to Base Voltage Collector Current (DC) 9 * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3519 (O. D. No. IC-6339) Date Published September 1994 P Printed in Japan © 1994 µPA1453 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT –10 µA VCB = –50 V, IE = 0 –10 µA VEB = –5 V, IC = 0 — VCE = –1 V, IC = –0.1 A 400 — VCE = –1 V, IC = –2 A –0.2 –0.3 V IC = –2 A, IB = –0.2 A –0.9 –1.2 V IC = –2 A, IB = –0.2 A ton 1 µs tstg 2.5 µs 1 µs IC = –2 A IB1 = –IB2 = –0.2 A . 15 Ω VCC =.. –30 V, RL = . See test circuit Collector Leakage Current ICBO Emitter Leakage Current IEBO DC Current Gain hFE1 * 60 220 DC Current Gain hFE2 * 100 220 DC Current Gain hFE3 * 50 Collector Saturation Voltage VCE(sat) * Base Saturation Voltage VBE(sat) * Turn On Time Storage Time Fall Time tf 100 TEST CONDITIONS VCE = –2 V, IC = –5 A * PW ≤ 350 µ s, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT . RL =. 15 Ω IC VIN IB1 IB2 PW . 50 µ s PW = . Duty Cycle ≤ 2 % T.U.T. IB2 Base Current Wave Form IB1 . VCC =. –30 V 10 % Collector Current Wave Form IC 90 % . 5V VBB = . ton 2 tstg tf µPA1453 TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA PW 10 = 2 D 50 m m s Li issi m s m pa s ite ti o d n –5 S/ bL im 60 ite d –1 io n S/ b at ip –0.5 Li m d i te d ite Lim 40 –2 20 –0.2 VCEO (MAX.) 80 IC - Collector Current - A 100 ss Di dT - Percentage of Rated Current - % –10 –0.1 0 50 100 150 Ta - Ambient Temperature - ˚C –1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE –2 –5 –10 –20 –50 VCE - Collector to Emitter Voltage - V –100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 Ta - Ambient Temperature - ˚C PT - Total Power Dissipation - W PT - Total Power Dissipation - W 30 NEC µ PA1453 150 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 20 10 0 DC CURRENT GAIN vs. COLLECTOR CURRENT 25 50 75 100 125 TC - Case Temperature - ˚C 150 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V –10 hFE - DC Current Gain 1000 VCE 2.0 VC E 100 =– = V –1 .0 V 10 –0.01 –0.1 –1.0 IC - Collector Current - A –10 IC = 10·IB VBE (sat) –1.0 –0.1 –0.01 t) sa E( VC –0.1 –1.0 Ic - Collector Current - A –10 3 µPA1453 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE –10 10 1 –6 –4 mA 0 5 –1 m A 0m –10 mA –80 A –60 m –40 mA –30 mA –20 mA –2 IB = –10 mA 0.1 1 10 PW - Pulse Width - ms 100 0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE mA A 0m A –2.0 mA –1.5 mA –0.4 A –1.0 m –8 –6 –4 –2 –0.2 VCEO (sus) –3. IC - Collector Current - A –3 m –2.5 –0.6 –2.0 –10 .5 –0.8 0 –0.4 –0.8 –1.2 –1.6 VCE - Collector to Emitter Voltage - V REVERSE BIAS SAFE OPERATING AREA –1.0 IC - Collector Current - A A –8 00 VCE ≥ –10 V –2 100 IC - Collector Current - A Rth (j-c) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE IB = –0.5 mA 0 0 4 –10 –20 –30 –40 VCE - Collector to Emitter Voltage - V –50 0 –20 –40 –60 –80 VCE - Collector to Emitter Voltage - V –100 µPA1453 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1453 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6