DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and 26.8 MAX. 4.0 FEATURES 2.5 • Surge Absorber (Zener Diode) built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. 10 MIN. 10 so on. 1.4 ORDERING INFORMATION Part Number Package Quality Grade µPA1478H 10 Pin SIP Standard 1.4 0.5 ±0.1 2.54 0.6 ±0.1 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) VCBO 31 ±4 V Collector to Emitter Voltage VCEO Collector to Base Voltage 31 ±4 V Emitter to Base Voltage VEBO 7 V Surge Sustaining Energy ECEO (SUS) 40 mJ/unit Collector Current (DC) IC(DC) ±2 A/unit Collector Current (pulse) IC(pulse)* ±4 A/unit Total Power Dissipation PT1** 3.5 W Total Power Dissipation PT2*** 28 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg –55 to +150 ˚C 5 4 7 9 6 8 1 10 (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) 1, 10 : Emitter (E) (B) R1 . R1 =. 10 kΩ . R2 = . 500 Ω R2 (E) * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3566 (O.D. No. IC-6634) Date Published November 1994 P Printed in Japan © 1994 µPA1478 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) MAX. UNIT Collector Leakage Current CHARACTERISTIC SYMBOL ICBO MIN. 10 µA VCB = 20 V, IE = 0 Emitter Leakage Current IEBO 1 mA VEB = 5 V, IC = 0 Collector to Emitter Sustaining Voltage VCEO(SUS) 35 V IC = 1 A, L = 3 mH DC Current Gain hFE1 * 1000 — VCE = 2 V, IC = 0.5 A DC Current Gain hFE2 * 2000 30000 — VCE = 2 V, IC = 1 A Collector Saturation Voltage VCE(sat) * 1.5 V IC = 1 A, IB = 1 mA Base Saturation Voltage VBE(sat) * 2 V IC = 1 A, IB = 1 mA Turn On Time ton 0.5 µs Storage Time tstg 3 µs Fall Time tf 1 µs IC = 1 A IB1 = –IB2 = 1 mA VCC =.. 20 V, R L =.. 20 Ω See test circuit 27 TYP. 31 TEST CONDITIONS * PW ≤ 350 µ s, Duty Cycle ≤ 2 % / pulsed SWITCHING TIME TEST CIRCUIT . 20 Ω RL = . VIN IB1 IB2 PW . 50 µ s PW = . Duty Cycle ≤ 2 % IC T.U.T. . –5 V VBB = . IB1 Base Current Wave Form IB2 . 20 V VCC = . 90 % Collector Current Wave Form IC 10 % ton tstg tf The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 µPA1478 TYPICAL CHARACTERISTICS (TA = 25 ˚C) SAFE OPERATING AREA 10 5 60 Lim ite d ip io at n 40 2 Di 50 Lim ssip m ite atio s n d S/ Li b m ite 1 0.5 0.2 d Li 0.1 m ite VCEO TYP. S/b IC - Collector Current - A 80 10 0 µ 0µ s 1m s s 30 100 ss Di 0.05 d dT - Percentage of Rated Current - % DERATING CURVE OF SAFE OPERATING AREA 20 0.02 Single Pulse 0.01 0 1 50 100 150 TC - Case Temperature - ˚C 5 10 20 50 100 VCE - Collector to Emitter Voltage - V TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 4 Circuits Operation 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 Ta - Ambient Temperature - ˚C PT - Total Power Dissipation - W PT - Total Power Dissipation - W 30 NEC µ PA1478 3 Circuits Operation 2 Circuits Operation 10 0 150 20000 10000 5000 2000 1000 500 200 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC - Collector Current - A 5.0 10 50 75 100 125 TC - Case Temperature - ˚C 10 VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Saturation Voltage - V hFE - DC Current Gain 50000 25 150 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2.0 V Pulsed 1 Circuit Operation 20 IC/IB = 1000 Pulsed 5.0 2.0 VBE (sat) 1.0 VCE (sat) 0.5 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 IC - Collector Current - A 3 µPA1478 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 100 2.0 22 0 VCE ≤ 10 V IC - Collector Current - A Rth (j-c) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE 10 1 1.6 0 20 0 18 160 140 120 1.2 0.8 100 IR = 80 µ A 0.4 0.1 0.1 1 10 PW - Pulse Width - ms 100 0 1.0 2.0 3.0 4.0 VCE - Collector to Emitter Voltage - V 5.0 µPA1478 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1478 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6