DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1792 SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. 8 5 FEATURES • Low on-resistance N-Channel 1 ; Source 1 2 ; Gate 1 7,8 ; Drain 1 P-Channel 3 ; Source 2 4 ; Gate 2 5,6 ; Drain 2 N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A) 0.05 MIN. RDS(on)2 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.9 A) 4.4 5.37 MAX. 0.8 +0.10 –0.05 RDS(on)1 = 36 mΩ MAX. (VGS = –10 V, ID = –2.9 A) 6.0 ±0.3 4 0.15 P-Channel 1.8 MAX. RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A) 1.44 1 RDS(on)3 = 65 mΩ MAX. (VGS = –4.0 V, ID = –2.9 A) • Low input capacitance 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M N-Channel Ciss = 760 pF TYP. P-Channel Ciss = 900 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) EQUIVALENT CIRCUIT ORDERING INFORMATION Drain PART NUMBER PACKAGE µPA1792G Power SOP8 Drain Body Diode Gate Gate Protection Diode Source Gate Protection Diode N-Channel Remark Body Diode Gate Source P-Channel The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14557EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan © 1999, 2000 µPA1792 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain to Source Voltage (VGS = 0 V) VDSS 30 –30 V Gate to Source Voltage (VDS = 0 V) VGSS ± 20 # 20 V Drain Current (DC) ID(DC) ± 6.8 # 5.8 A ID(pulse) ± 27.2 # 23.2 A Drain Current (pulse) Note1 Total Power Dissipation (1 unit) Note2 PT 1.7 W Total Power Dissipation (2 unit) Note2 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 2000 mm × 1.6 mm, TA = 25°C 2 Data Sheet G14557EJ1V0DS00 µPA1792 ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) N-CHANNEL CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 3.4 A 20.5 26 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.4 A 27 36 mΩ RDS(on)3 VGS = 4.0 V, ID = 3.4 A 31 42 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.1 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID =3.4 A 3.0 7.5 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V Gate to Source Leakage Current IGSS VGS = ±16 V, VDS = 0 V Input Capacitance Ciss VDS = 10 V 760 pF Output Capacitance Coss VGS = 0 V 250 pF Reverse Transfer Capacitance Crss f = 1 MHz 95 pF Turn-on Delay Time td(on) ID = 3.4 A 20 ns VGS(on) = 10 V 140 ns td(off) VDD = 15 V 50 ns tf RG = 10 Ω 30 ns Total Gate Charge QG ID = 6.8 A 14 nC Gate to Source Charge QGS VDD = 24 V 2 nC Gate to Drain Charge QGD VGS = 10 V 5 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage S 10 µA ±10 µA VF(S-D) IF = 6.8 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 6.8 A, VGS = 0 V 30 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 20 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 VGS(on) 10 % IG = 2 mA RL 50 Ω VDD 90 % PG. VDD 90 % ID 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton tf toff Data Sheet G14557EJ1V0DS00 3 µPA1792 P-CHANNEL CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = –10 V, ID = –2.9 A 30 36 mΩ RDS(on)2 VGS = –4.5 V, ID = –2.9 A 43 54 mΩ RDS(on)3 VGS = –4.0 V, ID = –2.9 A 49 65 mΩ VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –2.9 A 3.5 8.0 Drain Leakage Current IDSS VDS = –30 V, VGS = 0 V Gate to Source Leakage Current IGSS VGS = Input Capacitance Ciss VDS = –10 V 900 pF Output Capacitance Coss VGS = 0 V 300 pF Reverse Transfer Capacitance Crss f = 1 MHz 120 pF Turn-on Delay Time td(on) ID = –2.9 A 23 ns VGS(on) = –10 V 220 ns VDD = –15 V 90 ns tf RG = 10 Ω 70 ns Total Gate Charge QG ID = –5.8 A 17 nC Gate to Source Charge QGS VDD = –24 V 2.5 nC Gate to Drain Charge QGD VGS = –10 V 4.0 nC VF(S-D) IF = 5.8 A, VGS = 0 V 0.85 V Reverse Recovery Time trr IF = 5.8 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 30 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage # 16 V, VDS = 0 V TEST CIRCUIT 1 SWITCHING TIME VGS (−) VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1 µs Duty Cycle ≤ 1 % # 10 µA tr td(off) td(on) ton IG = −2 mA RL 50 Ω VDD 90 % ID τ 4 VGS(on) 10 % ID (−) VGS (−) 0 µA D.U.T. RL PG. –1 TEST CIRCUIT 2 GATE CHARGE D.U.T. RG S tf toff Data Sheet G14557EJ1V0DS00 µPA1792 TYPICAL CHARACTERISTICS (TA = 25°C) A) N-Channel TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 2.8 Mounted on ceramic substrate 2of 2000 mm ×1.6 mm 2.4 2 unit 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) ) L 0V on S( = 1 RD GS (V 10 ID(DC) Po we r 10 m s Di 10 ss 0m ipa tio 1 n s Lim ite d TA = 25 ˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A d ite im ) Mounted on ceramic substrate of 2000 mm2×1.6 mm, 1 unit PW = 10 0 µs 1m s 1000 100 Rth(ch-A) = 73.5˚C/W 10 1 0.1 0.01 100 µ Mounted on ceramic substrate of 2000 mm2 × 1.6 mm Single Pulse, 1 unit, TA = 25˚C 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G14557EJ1V0DS00 5 µPA1792 A) N-Channel DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 35 Pulsed VGS = 10 V Pulsed ID - Drain Current - A ID - Drain Current - A 30 10 TA =125˚C 75˚C 1 25˚C −25˚C 4.5 V 25 4.0 V 20 15 10 5 VDS = 10 V 0.1 1 2 3 4 0 5 0 75˚C 125˚C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 4.0 V 80 60 4.5 V 40 10 V 20 0 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ TA = −25˚C 25˚C 10 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S VDS = 10 V Pulsed 1 1.6 1.2 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.8 0.4 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed 90 ID = 4.0 A 80 6.8 A 70 60 50 40 30 20 10 0 5 0 15 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.0 1.0 ID - Drain Current - A − 50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet G14557EJ1V0DS00 µPA1792 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed Pulsed VGS = 4.5 V 40 30 10 V 20 10 − 50 0 50 100 10 VGS = 10 V VGS = 0 V 1 0.1 150 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss Coss 100 Crss 10 0.1 1 0.4 10 100 100 10 10 1.4 tr 100 tf td(off) td(on) 10 VDS = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 100 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 1 1.2 1.0 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 0.8 1000 VDS - Drain to Source Voltage - V 1000 0.6 SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.2 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 14 35 30 25 12 VDD = 24 V 15 V 6V VGS 10 20 8 15 6 10 4 5 0 0 2 VDS 5 VGS - Gate to Source Voltage - V 50 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ A) N-Channel ID = 6.8 A 10 15 20 25 0 30 QG - Gate Charge - nC ID - Drain Current - A Data Sheet G14557EJ1V0DS00 7 µPA1792 B) P-Channel TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 2.8 Mounted on ceramic substrate 2of 2000 mm ×1.6 mm 2.4 2 unit 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A −100 −10 ID(pulse) d ite im V) −10 )L on S( = RD GS (V Mounted on ceramic substrate of 2000 mm2 × 1.6 mm, 1 unit PW = 10 0 µs 1m s ID(DC) Po we r 10 m s Di 10 ss 0m ipa tio −1 n s Lim ite d TA = 25 ˚C Single Pulse −0.1 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V rth(t) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 Rth(ch-A) = 73.5˚C/W 10 1 0.1 0.01 100 µ Mounted on ceramic substrate of 2000 mm2 × 1.6 mm Single Pulse, 1 unit, TA = 25˚C 1m 10 m 100 m 1 10 PW - Pulse Width - s 8 Data Sheet G14557EJ1V0DS00 100 1000 µPA1792 B) P-Channel DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS −100 −30 Pulsed ID - Drain Current - A TA =150˚C 75˚C −1 −0.1 25˚C −25˚C −0.01 VDS = −10 V −1 −2 −3 −4.0 V −15 −10 0 −4 −0.4 0 −0.8 −1.2 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed ID = −1.2 A −5.8 A 50 100 VDS = −10V Pulsed TA = −25˚C 25˚C 10 75˚C 150˚C 1 0.1 −0.001 −0.01 −0.1 −10 −1 −100 ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed 80 VGS = −4.0 V 60 −4.5 V 40 −10 V 20 0 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-state Resistance - mΩ |yfs| - Forward Transfer Admittance - S −0.001 0 RDS(on) - Drain to Source On-state Resistance - mΩ −4.5 V VGS = −10 V −20 −5 VGS(off) - Gate to Source Cut-off Voltage - V ID - Drain Current - A Pulsed −25 −10 40 30 20 10 0 −5 0 −15 −10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −3.0 VDS = −10 V ID = −1 mA −2.0 −1.0 0 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G14557EJ1V0DS00 9 µPA1792 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed VGS = −4.0 V −4.5 V −10 V 60 40 20 0 − 50 0 50 100 Pulsed VGS = −4.5 V 10 VGS = 0 V 1 0.1 0.01 150 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss 100 10 −0.1 Crss −1 −10 −100 tf td(off) td(on) 100 10 1 −1 −10 10 −100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS −12 −25 −20 −10 VDD = −24 V −15 V −6 V −8 −6 −15 VGS −10 −5 −4 −2 VDS ID = −5.8 A 0 0 0 5 10 15 QG - Gate Charge - nC ID - Drain Current - A 10 VDS = −15 V VGS = −10 V RG = 10 Ω −100 −30 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 100 −10 1.4 ID - Drain Current - A di/dt = 100 A/µs VGS = 0 V −1 1.2 1.0 tr −0.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 −0.1 0.8 1000 VDS - Drain to Source Voltage - V 1000 0.6 SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 0.4 10000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.2 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C Data Sheet G14557EJ1V0DS00 20 VGS - Gate to Source Voltage - V 80 100 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ B) P-Channel µPA1792 [MEMO] Data Sheet G14557EJ1V0DS00 11 µPA1792 • The information in this document is current as of July, 2000. 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