NEC UPA1804

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1804
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
This product is a switching device which can be driven
8
directly by a 4.5 V power source.
5
The µPA1804 features a low on-state resistance and
1, 5, 8 : Drain
2, 3, 6, 7: Source
4
: Gate
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
1.2 MAX.
1.0±0.05
0.25
and so on.
3° +5°
–3°
FEATURES
0.1±0.05
• Can be driven by a 4.5 V power source
1
4
0.5
0.6 +0.15
–0.1
• Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 32 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
6.4 ±0.2
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1804GR-9JG
0.65
0.27 +0.03
–0.08
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±8.0
A
ID(pulse)
±32
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note1
Total Power Dissipation
Note2
1.0 ±0.2
0.1
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
Drain to Source Voltage
Drain Current (pulse)
4.4 ±0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13868EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1998,1999
µ PA1804
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
2.1
2.5
V
| yfs |
VDS = 10 V, ID = 4.0 A
3
8.7
RDS(on)1
VGS = 10 V, ID = 4.0 A
18
23
mΩ
RDS(on)2
VGS = 4.5 V, ID = 4.0 A
24
32
mΩ
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
761
pF
Output Capacitance
Coss
VGS = 0 V
258
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
99
pF
Turn-on Delay Time
td(on)
VDD = 15 V
24
ns
tr
ID = 4.0 A
83
ns
VGS(on) = 10 V
46
ns
tf
RG = 10 Ω
29
ns
Total Gate Charge
QG
VDS = 24 V
13.5
nC
Gate to Source Charge
QGS
ID = 8.0 A
2.4
nC
Gate to Drain Charge
QGD
VGS = 10 V
3.7
nC
Rise Time
Turn-off Delay Time
td(off)
Fall Time
Diode Forward Voltage
VF(S-D)
IF = 8.0 A, VGS = 0 V
0.86
V
Reverse Recovery Time
trr
IF = 8.0 A, VGS = 0 V
27
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A / µs
16
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
90 %
90 %
ID
VGS
0
ID
10 %
0 10 %
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
tr
td(on)
ton
RL
50 Ω
VDD
90 %
VDD
ID
2
VGS(on)
10 %
IG = 2 mA
td(off)
tf
toff
Data Sheet D13868EJ1V0DS00
µ PA1804
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
100
d
ite V)
Lim 10
=
80
R
60
40
10
V
(@
PW
ID(DC)
=1
10
ms
ms
10
0m
s
DC
1
0.1
20
TA = 25 ˚C
Single Pulse
Mounted on Ceramic
Substrate of 50cm2 x 1.1mm
0
30
60
120
90
TA - Ambient Temperature - ˚C
0.01
0.1
150
10
1
100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
100
30
VGS = 10 V
VDS = 10 V
10
ID - Drain Current - A
25
ID - Drain Current - A
ID(pulse)
n)
(o
DS
GS
ID - Drain Current - A
dT - Derating Factor - %
100
4.5 V
20
15
10
1
TA = −25˚C
25˚C
75˚C
125˚C
0.1
0.01
0.001
5
0.0001
0
0.2
0.6
0.4
0.8
1.0
0.00001
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
VDS = 10 V
ID = 1 mA
2.0
1.5
−50
0
50
100
Tch - Channel Temperature - ˚C
100
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
4.0
2.0
3.0
VGS - Gate to Sorce Voltage - V
1.0
VDS - Drain to Source Voltage - V
VDS = 10 V
10
TA = −25˚C
25˚C
75˚C
125˚C
1
0.1
150
0.01
0.1
1
10
100
ID - Drain Current - A
Data Sheet D13868EJ1V0DS00
3
50
VGS = 4.5 V
40
TA = 125˚C
75˚C
30
25˚C
−25˚C
20
RDS (on) - Drain to Source On-state Resistance - mΩ
10
0.01
0.1
1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
ID = 4.0 A
VGS = 4.5 V
30
10 V
20
10
−50
0
50
100
150
RDS (on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1804
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
30
TA = 125˚C
75˚C
20
10
0.01
40
30
20
10
0
4
12
8
16
20
SWITCHING CHARACTERISTICS
1000
f = 1 MHz
VGS = 0 V
td(on), tr, td(off), tf - Swwitchig Time - ns
Ciss, Coss, Crss - Capacitance - pF
100
VGS - Gate to Source Voltage - V
1000
Ciss
Coss
100
Crss
10
10
100
tr
100
tf
td(off)
td(on)
10
VDD = 15 V
VGS(on) = 10V
1 RG = 10 Ω
0.1
VDS - Drain Source Voltage - V
4
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 4.0 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1
25˚C
−25˚C
Tch - Channel Temperature - ˚C
10000
VGS = 10 V
1
ID - Drain Current - A
Data Sheet D13868EJ1V0DS00
10
µ PA1804
DYNAMIC INPUT CHARACTERISTICS
12
ID = 8.0 A
VGS - Gate to Source Voltage - V
IF - Source to Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
0.1
0.01
0.4
0.8
0.6
1.2
1.0
10
VDD = 24 V
15 V
6V
8
6
4
2
0
2
VF(S-D) - Source to Drain Voltage - V
4
6
8
10
12
14
16
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - ˚C/W
1000
Mounted on ceramic
Substrate of 50 cm2 x 1.1 mm
Single Pulse
100
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13868EJ1V0DS00
5
µ PA1804
[MEMO]
6
Data Sheet D13868EJ1V0DS00
µ PA1804
[MEMO]
Data Sheet D13868EJ1V0DS00
7
µ PA1804
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8