DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) FEATURES +0.2 6.5 ±0.2 5.0 ±0.2 1 7.0 MIN. 5.5 ±0.2 13.7 MIN. RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) 2 3 RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A) 1.3 MAX. • Low Ciss : Ciss = 860 pF (TYP.) 0.5 ±0.1 4 1.6 ±0.2 RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) 2.3 ±0.2 1.5 –0.1 • Low on-resistance • Built-in gate protection diode 0.6 ±0.1 0.6 ±0.1 2.3 2.3 30 V VGSS ±20 V Drain Current (DC) ID(DC) ±20 A ID(pulse) ±80 A Total Power Dissipation (Tc = 25 °C) PT 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (Pulse) 3 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 1.3 MAX. VDSS Gate to Source Voltage (VDS = 0) Note 1 2 12.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0) 4 0.8 4.3 MAX. TO-252 2.3 ±0.2 5.5 ±0.2 10.0 MAX. 5.0 ±0.2 1.0 MIN. 1.5 TYP. 6.5 ±0.2 0.5 TO-251 +0.2 2SK2981 TO-251(MP-3) 1.5 –0.1 PACKAGE 0.8 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-252(MP-3Z) (SURFACE MOUNT TYPE) EQUIVALENT CIRCUIT Note PW ≤ 10 µs, Duty cycle ≤ 1 % Drain Body Diode Gate Gate Protection Diode Remark Gate Drain Source Fin (Drain) MIN. PART NUMBER 2SK2981-Z 1. 2. 3. 4. 0.75 ORDERING INFORMATION Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D12355EJ1V0DS00 (1st edition) Date Published December 1998 NS CP(K) Printed in Japan © 1998 2SK2981 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 10 A 20 27 mΩ RDS(on)2 VGS = 4.5 V, ID = 10 A 30 40 mΩ RDS(on)3 VGS = 4 V, ID = 10 A 35 50 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 10 A 6.0 13.0 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz Output Capacitance Gate to Source Cut-off Voltage S 860 pF Coss 350 pF Reverse Transfer Capacitance Crss 160 pF Turn-on Delay Time td(on) ID = 10 A, VGS(on) = 10 V, VDD = 15 V 25 ns RG = 10 Ω 270 ns td(off) 65 ns tf 65 ns 20 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 3.5 nC Gate to Drain Charge QGD 6.5 nC Body Diode forward Voltage ID = 20 A, VDD = 24 V, VGS = 10 V VF(S-D) IF = 20 A, VGS = 0 0.8 V Reverse Recovery Time trr IF = 20 A, VGS = 0 35 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 30 nC TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Ω Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1µ s Duty Cycle ≤ 1 % 2 0 10 % 10 % tr td (on) ton td (off) tf toff Data Sheet D12355EJ1V0DS00 50 Ω RL VDD 2SK2981 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 80 100 120 140 160 ID(PULSE)=80 A d ite ) Lim 0 V n) (o =1 DS S G R V t (a PW PW PW Po we 10 PW ID(DC)=20 A rD = = 10 0 iss 50 0 = 10 Pulsed = 1 m 100 µs ID - Drain Current - A ID - Drain Current - A 60 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 100 40 TC - Case Temperature - ˚C TC - Case Temperature - ˚C s m s m s ipa tio n Lim ite d 1 80 VGS =10.0 V 60 4.5 V 40 4.0 V 20 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 100 Pulsed TA = −25˚C 25˚C 75˚C 125˚C 10 1 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet D12355EJ1V0DS00 3 2SK2981 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 125 ˚C/W 100 10 Rth(ch-c) = 6.25 ˚C/W 1 0.1 0.01 0.001 Single Pulse TC = 25˚C 10 µ 100µ 1m 10 m 100 m 1 10 100 1000 | yfs | - Forward Transfer Admittance - S 100 10 VDS = 10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 60 VGS = 4.0 V 40 4.5 V 20 10.0 V 0 0.2 1 10 ID - Drain Current - A 4 100 VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 40 ID = 10 A 20 0 5 10 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 − 50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D12355EJ1V0DS00 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 80 ISD - Diode Forward Current - A 60 VGS = 4.0 V 4.5 V 40 10.0 V 20 0 ID = 10 A − 50 0 50 100 100 VGS = 10 V 10 0.1 150 0 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 Ciss Coss Crss 100 10 0.1 1 1.5 1.0 0.5 VSD - Source to Drain Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0V 1 10 100 tr tf 100 td(off) td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 100 10 1 0.1 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 20 A VGS = 10 V 14 30 20 12 VGS 10 VDD = 24 V 15 V 6V 8 6 4 10 2 VDS 0 3 IF - Diode Current - A 6 9 12 15 18 21 24 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK2981 0 QG - Gate Charge - nC Data Sheet D12355EJ1V0DS00 5 2SK2981 [MEMO] 6 Data Sheet D12355EJ1V0DS00 2SK2981 [MEMO] Data Sheet D12355EJ1V0DS00 7 2SK2981 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5