DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING ★ ORDERING INFORMATION DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is PART NUMBER PACKAGE 2SK1398 SST suitable for applications including headphone stereos which need power saving. FEATURES • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) VDSS 50 V Gate to Source Voltage (VDS= 0 V) VGSS ±7.0 V Drain Current (DC) ID(DC) ±100 mA ID(pulse) ±200 mA Drain Current (pulse) Note Total Power Dissipation PT 250 mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note PW ≤ 10 ms, Duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14772EJ2V0DS00 (2nd edition) (Previous No. TC-2342) Date Published March 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1991, 2000 2SK1398 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS ★ SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 10 µA ±5.0 µA 1.5 V Drain Cut-off Current I DSS VDS = 50 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.9 1.2 | yfs | VDS = 3.0 V, ID = 10 mA 20 38 RDS(on)1 VGS = 2.5 V, ID = 10 mA 22 40 Ω RDS(on)2 VGS = 4.0 V, ID = 10 mA 14 20 Ω Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance mS Input Capacitance Ciss VDS = 3.0 V 8 pF Output Capacitance Coss VGS = 0 V 7 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 pF Turn-on Delay Time t d(on) VDD = 3.0 V 15 ns tr ID = 20 mA 100 ns VGS(on) = 3.0 V 30 ns RG = 10 Ω, RL = 150 Ω 35 ns Rise Time Turn-off Delay Time td(off) Fall Time tf TEST CIRCUIT SWITCHING TIME D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 90 % VDD 90 % ID 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 2 VGS(on) 10 % tr td(on) ton td(off) tf toff Data Sheet D14772EJ2V0DS00 2SK1398 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW dT - Derating Factor - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 300 250 200 150 100 50 0 100 120 140 160 30 TC - Case Temperature - ˚C 60 90 120 150 180 TA - Ambient Temperature - ˚C FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA Pulsed 80 VGS = 4.5 V 60 VGS = 4.0 V VGS = 2.5 V 40 20 0 1.0 0.5 10 TA = 150 ˚C 75 ˚C 25 ˚C −25 ˚C 1 0.1 2.0 1.5 VDS = 3.0 V 0.01 VDS - Drain to Source Voltage - V 0 1 2 3 4 5 6 7 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 3.0 V ID = 1.0 µA 1.5 1.0 1000 | yfs | - Forward Transfer Admittance - mS 2.0 VGS(off) - Gate to Source Cut-off Voltage - V ★ ID - Drain Current - mA 100 Pulsed 100 VDS = 5.0 V f = 1 kHz 100 10 1 10 100 200 ID - Drain Current - mA 0.5 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14772EJ2V0DS00 3 RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ★ ID = 100 mA ID = 10 mA 10 0 1 3 2 4 5 6 7 8 9 RDS(on) - Drain to Source On-state Resistance - Ω 2SK1398 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 2.5 V VGS = 4.0 V 10 1 0.1 1 10 100 ID - Drain Current - mA 10 25 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 2.5 V ID = 5.0 mA 20 15 10 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω VGS - Gate to Source Voltage - V 100 50 150 30 VGS = 4.0 V ID = 5.0 mA 25 20 15 0 Tch - Channel Temperature - ˚C Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1 000 VGS = 0 V f = 1 MHz 10 tr 100 tf td(off) td(on) 10 1 1 10 100 1 1 10 VDD = 3.0 V VGS = 3.0 V RGS = 10 Ω 1000 100 ID - Drain Current - mA VDS - Drain to Source Voltage - V 4 150 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 100 50 Data Sheet D14772EJ2V0DS00 2SK1398 ISD - Source to Drain Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed VGS = 0 V 10 1 0.1 0.5 0.6 0.7 0.8 0.9 1.0 VSD - Source to Drain Voltage - V Data Sheet D14772EJ2V0DS00 5 2SK1398 PACKAGE DRAWING (Unit: mm) SST 2.0±0.2 3.0±0.2 4.0±0.2 2 3 1.0 TYP. 1 0.6 TYP. 0.50 TYP. Drain 0.42 TYP. 12.5 MIN. 0.45 TYP. EQUIVALENT CIRCUIT Body Diode Gate Gate Protection Source Diode Marking : G25 1.27 TYP. 1 Remark 2 3 1.35 TYP. 1.27 TYP. 1. Source 2. Drain 3. Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14772EJ2V0DS00 2SK1398 [MEMO] Data Sheet D14772EJ2V0DS00 7 2SK1398 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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