DATA SHEET MOS INTEGRATED CIRCUIT µPD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially improved as compared with conventional driver circuits that use bipolar transistors. Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom FETS) RON1 = 1.0 Ω TYP. (VM = 5.0 V) RON2 = 1.5 Ω TYP. (VM = 12.0 V) • Low current consumption: IDD = 0.4 mA TYP. • Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected) • Motor voltage 12 V/5 V compatible • Compact surface mount package: 20-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) C1H 1 20 C1L C2L 2 19 C2H VM1 3 18 VG 1A 4 17 1B PGND1 5 16 PGND2 2A 6 15 2B VDD 7 14 VM2 IN1 8 13 SEL IN2 9 12 IN4 IN3 10 11 DGND Document No. S12720EJ2V0DS00 (2nd edition) Date Published September 1997 N Printed in Japan © 1997 µPD16808 ORDERING INFORMATION Part Number µPD16808GS Package 20-pin plastic SOP (300 mil) BLOCK DIAGRAM 0.01 µ F VDD OSC CIRCUIT C1L C1H 0.01 µ F 0.01 µ F C2L C2H CHARGE PUMP VG 2 × VDD + VM VM VM1 1A IN1 IN2 CONTROL CIRCUIT 1 LEVEL SHIFT 1 “H” BRIDGE 1 1B PGND1 SEL VM2 2A IN3 IN4 DGND CONTROL CIRCUIT 2 LEVEL SHIFT 2 “H” BRIDGE 2 2B PGND2 Connected in diffusion layer 2 + µPD16808 FUNCTION TABLE • With 1- to 2-phase excitation selected (SEL = High) Excitation Direction IN1 IN2 IN3 IN4 H1 H2 —— L L L L S S H2R L L L H S R H2F L L H L S F —— L L H H S S H1R L H L L R S <3> L H L H R R <2> L H H L R F H1R L H H H R S H1F H L L L F S <4> H L L H F R <1> H L H L F F H1F H L H H F S —— H H L L S S H2R H H L H S R H2F H H H L S F —— H H H H S S H1F <4> <1> H2R H2F <3> <2> H1R • With 2-phase excitation selected (SEL = Low) Excitation Direction IN1 IN3 IN4 IN2 H1 H2 <1> H H × H F F <2> L H × H R F <3> L L × H R R <4> H L × H F R – × × × L F: Forward R: Reverse S: Stop Stop ×: Don’t care For the excitation waveform timing chart, refer to APPLICATION CIRCUIT EXAMPLE. FORWARD REVERSE STOP VM VM VM ON OFF A OFF OFF B ON A ON ON OFF B OFF A OFF OFF B OFF 3 µPD16808 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Symbol Rating Unit Supply voltage (motor block) VM –0.5 to +15 V Supply voltage (control block) VDD –0.5 to +7 V Pd1 1.0Note 1 W Pd2 1.25Note 2 ID (pulse) ±1.0Note 2, 3 A Input voltage VIN –0.5 to VDD + 0.5 V Operating temperature range TA 0 to 60 °C TjMAX. 150 °C Tstg –55 to +125 °C Power dissipation Instantaneous H bridge driver current Operation junction temperature Storage temperature range Notes 1. IC only 2. When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) 3. t ≤ 5 ms, Duty ≤ 40 % Pd – TA Characteristics 1.4 When mounted on printed circuid boad Average power dissipation Pd (W) 1.2 IC only 1.0 0.8 0.6 0.4 0.2 0 20 40 60 Ambient temperature TA (˚C) 4 80 100 µPD16808 RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Supply voltage (motor block) VM 4.0 5.0 13.2 V Supply voltage (control block) VDD 4.0 5.0 6.0 V ±600 mA H bridge driver currentNote VM = 5.0 V 1-/2-phase excitation IDR ±450 2-phase excitation Charge pump capacitance C1 to C3 5 20 nF TA 0 60 °C Operating temperature Note When mounted on a printed circuit board (100 × 100 × 1 mm, glass epoxy) ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified) Parameter OFF VM pin current Symbol IM Conditions VM = 6.0 V, VDD = 6.0 MIN. TYP. VNote 1 VM = 13.2 V, VDD = 6.0 VNote 1 Unit 1.0 µA 1.0 mA VDD pin current IDD Note 2 1.0 mA Control pin high-level input IIH TA = 25 °C, VIN = VDD 1.0 µA 0 ≤ TA ≤ 60 °C, VIN = VDD 2.0 current Control pin low-level input IIL current Control pin input pull-up RIN resistance 0.4 MAX. TA = 25 °C, VIN = 0 V –0.18 0 ≤ TA ≤ 60 °C, VIN = 0 V –0.25 TA = 25 °C 35 0 ≤ TA ≤ 60 °C 25 75 50 65 mA kΩ Control pin high-level input voltage VIH 3.0 VDD + 0.3 V Control pin low-level input voltage VIL –0.3 0.8 V Ω H bridge circuit ON RON1 VDD = 5 V, VM = 5 V 1.0 2.0 RON2 VDD = 5 V, VM = 12 V 1.5 3.0 Ω ∆RON1 Excitation direction <2>, <4>Note 4 ±5 % ∆RON2 Excitation direction <1>, <3> ±10 Charge pump circuit (VG) turn-ON time TONG VDD = 5 V, VM = 5 V H bridge circuit turn-ON time TONH H bridge circuit turn-OFF time TOFFH resistanceNote 3 RON relative accuracy Notes 1. 2. 3. 4. 0.2 1.0 ms C1 = C2 = C3 = 10 nF 5 µs RM = 20 Ω 5 µs Control pins (IN1, IN2, IN3, IN4): low Control pins (IN1, IN2, IN3, IN4): high Sum of ON resistances of top and bottom transistors For the excitation direction, refer to FUNCTION TABLE. 5 µPD16808 CHARACTERISTIC CURVES RON vs. VDD (= VM) Characteristics RON vs. VM Characteristics 3 3 RM = 100 Ω H bridge ON resistance RON (Ω) H bridge ON resistance RON (Ω) RM = 20 Ω 2 1 0 4.0 5.0 RON vs. Tj Characteristics H bridge ON resistance RON (Ω) VDD = VM =5.0 V RM = 20 Ω 2 1 100 Operation junction temperature Tj (˚C) 6 VDD = 5.0 V VDD = 5.5 V 1 11 12 Motor voltage VM (V) 3 50 VDD = 4.5 V 0 10 6.0 Supply voltage VDD (= VM) (V) 0 2 150 13 14 Direction Internal circumference seek External circumference seek PH11 PH21 PH31 PH41 0.01 µ F VDD C1L OSC CIRCUIT PH11 PH21 0.01 µ F C1H C2L C2H CHARGE PUMP 0.01 µ F VG 2 × VDD + VM VM VM1 IN1 IN2 PH31 VDD PH41 SEL IN3 DGND CONTROL CIRCUIT 1 “H” BRIDGE 1 1B PGND1 VM2 + 2A CONTROL CIRCUIT 2 LEVEL SHIFT 2 “H” BRIDGE 2 2B PGND2 µPC2100AGF 7 Connected in diffusion layer µPD16808 IN4 1A LEVEL SHIFT 1 APPLICATION CIRCUIT EXAMPLE Step input • Connection with 1-chip FDD LSI µPC2100AGF (With 1- to 2-phase excitation selected) µ PC2100AGF Stepping Motor Excitation Timing Chart External circumference seek Internal circumference seek Direction PH11 PH21 0.01 µ F VDD OSC CIRCUIT C1L C1H 0.01 µ F C2L C2H CHARGE PUMP 0.01 µ F VG 2 × VDD + VM VM VM1 SPF0 1A IN1 PH11 PH21 IN2 CONTROL CIRCUIT 1 LEVEL SHIFT 1 “H” BRIDGE 1 1B PGND1 SEL VM2 IN3 IN4 DGND 2A CONTROL CIRCUIT 2 LEVEL SHIFT 2 “H” BRIDGE 2 + 2B PGND2 µ PC2100AGF Connected in diffusion layer µPD16808 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Step input • Connection with 1-chip FDD LSI µPC2100AGF (With 2-phase exication selected) 8 µ PC2100AGF Stepping Motor Excitation Timing Chart µPD16808 20 PIN PLASTIC SOP (300 mil) 20 11 P detail of lead end 1 10 A H J E K F G I C N D M L B M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS INCHES A 13.00 MAX. 0.512 MAX. B 0.78 MAX. 0.031 MAX. C 1.27 (T.P.) 0.050 (T.P.) D 0.40 +0.10 –0.05 0.016 +0.004 –0.003 E 0.1±0.1 0.004±0.004 F 1.8 MAX. 0.071 MAX. G 1.55 0.061 H 7.7±0.3 0.303±0.012 I 5.6 0.220 J 1.1 0.043 K 0.20 +0.10 –0.05 0.008 +0.004 –0.002 L 0.6±0.2 0.024 +0.008 –0.009 M 0.12 0.005 N 0.10 0.004 P 3° +7° –3° 3° +7° –3° P20GM-50-300B, C-4 9 µPD16808 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E). Soldering Method Soldering Conditions Symbol of Recommended Soldering Infrared reflow Peak package temperature: 230 °C, Time: 30 seconds MAX. (210 °C MIN.), Number of times: 1, Number of days: NoneNote IR30-00 VPS Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), Number of times: 1, Number of days: NoneNote VP15-00 Wave soldering Solder bath temperature: 260 °C MAX., Time: 10 seconds MAX., Number of times: 1, Number of days: NoneNote WS60-00 Partial heating Pin temperature: 300 °C MAX., Time: 10 seconds MAX., Number of days: NoneNote Note The number of storage days at 25 °C, 65 % RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination (except partial heating). 10 – µPD16808 [MEMO] 11 µPD16808 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Anti-radioactive design is not implemented in this product. M4 96.5 2