ETC UPD16818GS

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16818
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By
employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and
power consumption as compared with conventional driver circuits that use bipolar transistors.
In addition, the drive current can be adjusted by an external resistor in power-saving mode.
The µPD16818 is therefore ideal as the driver circuit of a 2-phase excitation, bipolar-driven stepping motor for the head
actuator of an FDD.
FEATURES
• Compatible with 3V-/5V- supply voltage
• Pin compatible with µPD16803
• Low ON resistance (sum of ON resistors of top and bottom MOS FETs)
RON1= 1.2 Ω (VM = 3.0 V)
RON2 = 1.0 Ω (VM = 5.0 V)
• Low current consumption: IDD = 0.4 mA TYP. (VDD = 2.7 V to 3.6 V)
• Stop mode function that turns OFF all output MOS FETs
• Drive current can be set in power-saving mode (set by external resistor)
• Compact surface mount package
ORDERING INFORMATION
Part Number
Package
µPD16818GS
20-pin plastic SOP (300 mil)
µPD16818GR-8JG
20-pin plastic SSOP (225 mil)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Supply voltage
Power
Symbol
Condition
Rating
Unit
V
Motor block
VM
–0.5 to +7.0
Control block
VDD
–0.5 to +7.0
µPD16818GS
PD1
1.0Note 1
PD2
1.25Note 2
PD2S
0.79Note 2
consumption
µPD16818GR-8JG
Instantaneous H bridge drive current
ID (pulse)
PW ≤ 5 ms, Duty ≤ 40 %
W
±1.0Note 2
A
Input voltage
VIN
–0.5 to VDD + 0.5
V
Operating temperature range
TA
0 to 60
°C
TJ (MAX)
150
°C
Tstg
–55 to +150
°C
Operation junction temperature
Storage temperature range
Notes 1. IC only
2. When mounted on a glass epoxy printed circuit board (100 mm × 100 mm × 1 mm)
The information in this document is subject to change without notice.
Document No. S11365EJ2V0DS00 (2nd edition)
Date Published December 1997 N
Printed in Japan
©
1997
µPD16818
RECOMMENDED OPERAING CONDITIONS
Parameter
Supply voltage
Symbol
MIN.
Motor block
VM
Control block
Rx pin connection resistance
TYP.
MAX.
Unit
2.7
6.0
V
VDD
2.7
6.0
RX
2
kΩ
H bridge drive current
µPD16818GS
IDR
430
(VDD = VM = 3 V)Note
µPD16818GR-8JG
IDRS
340
Charge pump capacitor capacitance
Operating temperature
mA
C1-C3
5
20
nF
TA
0
60
°C
Note When mounted on a glass epoxy printed circuit board (100 mm × 100 mm × 1 mm)
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
VDD = VM = 4.0 V to 6.0 V
Parameter
Symbol
Conditions
TYP.
MAX.
Unit
1.0
µA
2.0
mA
µA
OFF VM pin current
IM
INC pin low
VM = VDD = 6 V
VDD pin current
IDD
Note 1
High-level input current
IIH1
TA = 25 °C, VIN = VDD
1.0
0 ≤ TA ≤ 60 °C, VIN = VDD
2.0
(IN1, IN2, INC)
Low-level input current
IIL1
(IN1, IN2, INC)
PS pin high-level input current
PS pin low-level input voltage
Input pull-up resistance
IIH2
IIL2
RINU
(IN1, IN2, INC)
PS pin input pull-down resistance
RIND
1.0
TA = 25 °C, VIN = 0
–0.15
0 ≤ TA ≤ 60 °C, VIN = 0
–0.2
TA = 25 °C, VIN = VDD
0.15
0 ≤ TA ≤ 60 °C, VIN = VDD
0.2
TA = 25 °C, VIN = 0
–1.0
0 ≤ TA ≤ 60 °C, VIN = 0
–2.0
TA = 25 °C
35
0 ≤ TA ≤ 60 °C
25
TA = 25 °C
35
0 ≤ TA ≤ 60 °C
25
75
50
65
mA
mA
µA
kΩ
75
50
65
kΩ
Control pin high-level input voltage
VIH
3.0
VDD + 0.3
V
Control pin low-level input voltage
VIL
–0.3
0.8
V
2.0
Ω
±15
%
H bridge ON resistanceNote 2
RON2
VDD = VM = 5 V
RON relative accuracy
∆RON
Excitation direction <1>, <3>
Excitation direction <2>,
Charge pump circuit turn ON time
tONG
VDD = VM = 5 V
H bridge turn ON time
tONH
H bridge turn OFF time
tOFFH
C1 = C2 = C3 = 10nF
RM = 20 Ω
Notes 1. When IN1 = IN2 = INC = “H”, PS = “L”
2. Sum of ON resistances of top and bottom MOS FETs
3. For the excitation direction, refer to FUNCTION TABLE.
2
MIN.
1.0
±5
<4>Note 3
0.3
2.0
ms
2.0
µs
5.0
µs
µPD16818
ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
VDD = VM = 2.7 V to 3.6 V
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
1.0
µA
1.0
mA
µA
OFF VM pin current
IM
INC pin low
VM = VDD = 3.6 V
VDD pin current
IDD
Note 1
High-level input current
IIH1
TA = 25 °C, VIN = VDD
1.0
0 ≤ TA ≤ 60 °C, VIN = VDD
2.0
(IN1, IN2, INC)
Low-level input current
IIL1
(IN1, IN2, INC)
PS pin high-level input current
PS pin low-level input voltage
Input pull-up resistance
IIH2
IIL2
RINU
(IN1, IN2, INC)
PS pin input pull-down resistance
RIND
0.4
TA = 25 °C, VIN = 0
–0.09
0 ≤ TA ≤ 60 °C, VIN = 0
–0.12
TA = 25 °C, VIN = VDD
0.09
0 ≤ TA ≤ 60 °C, VIN = VDD
0.12
TA = 25 °C, VIN = 0
–1.0
0 ≤ TA ≤ 60 °C, VIN = 0
–2.0
TA = 25 °C
35
0 ≤ TA ≤ 60 °C
25
TA = 25 °C
35
0 ≤ TA ≤ 60 °C
25
75
50
65
mA
mA
µA
kΩ
75
50
65
kΩ
Control pin high-level input voltage
VIH
2.0
VDD + 0.3
V
Control pin low-level input voltage
VIL
–0.3
0.8
V
2.4
Ω
±15
%
H bridge ON
resistanceNote 2
RON relative accuracy
RON1
VDD = VM = 3 V
∆RON
Excitation direction <1>, <3>
Excitation direction <2>,
Vx voltage in power-saving
modeNote 4
Vx relative accuracy in power-
VX
∆V X
saving mode
1.2
±5
<4>Note 3
VDD = VM = 3 V
RX = 270 kΩ
1.4
V
Excitation direction <1>, <3>
±5
%
Excitation direction <2>, <4>
±5
Charge pump circuit turn ON time
tONG
VDD = VM = 3 V
H bridge turn ON time
tONH
H bridge turn OFF time
tOFFH
1.0
1.2
0.3
2.0
ms
C1 = C2 = C3 = 10nF
2.0
µs
RM = 20 Ω
5.0
µs
Notes 1. When IN1 = IN2 = INC = “H”, PS = “L”
2. Sum of ON resistances of top and bottom MOS FETs
3. For the excitation direction, refer to FUNCTION TABLE.
4. Vx is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in FUNCTION TABLE.
3
µPD16818
PIN CONFIGURATION (Top View)
20-pin plastic SOP (300 mil)
20-pin plastic SSOP (225 mil)
C1H
1
20
C1L
C2L
2
19
C2H
VM1
3
18
VG
1A
4
17
1B
PGND
5
16
PGND
2A
6
15
2B
VDD
7
14
VM2
IN1
8
13
RX
IN2
9
12
PS
INC
10
11
DGND
FUNCTION TABLE
H1F
Excitation Direction
INC
IN1
IN2
H1
H2
<1>
H
H
H
F
F
<2>
H
L
H
R
F
<3>
H
L
L
F
R
<4>
H
H
L
R
R
–
L
×
×
<4>
<1>
H2R
H2F
<3>
Stop
<2>
H1R
F: FORWARD
R: REVERSE
FORWARD
REVERSE
STOP
VM
VM
VM
ON
OFF
A
OFF
4
OFF
B
ON
A
ON
ON
OFF
B
OFF
A
OFF
OFF
B
OFF
µPD16818
BLOCK DIAGRAM
0.01 µ F
VDD C1L
OSC
CIRCUIT
0.01 µ F
C1H C2L
C2H
0.01 µ F
VG
VM
CHARGE
PUMP
VM1
RX
LEVEL CONTROL
CIRCUIT
BAND GAP
REFERENCE
1A
“H”
BRIDGE 1
SWITCH
CIRCUIT
INC
PGND
50 kΩ
50 kΩ
IN1
IN2
50 kΩ
PS
50 kΩ
Note
1B
VM2
CONTROL
CIRCUIT
LEVEL
SHIFT
2A
“H”
BRIDGE 2
2B
DGND
PGND
Note The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump circuit
is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current.
Remark
is connected in diffusion layer.
5
µPD16818
CHARACTERISTIC CURVES
PD vs. TA Characteristics ( µPD16818GS)
PD vs. TA Characteristics ( µ PD16818GR-8JG)
1.4
1.4
Average power consumption PD (W)
Average power consumption PD (W)
When mounted on a printed circuit board
1.2
IC only
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
Ambient temperature TA (°C)
100
1.2
1.0
When mounted on a printed circuit board
0.8
0.6
0.4
0.2
0
20
IDD vs. TA Characteristics
2
VDD = 6 V
Supply current IDD (mA)
Supply current IDD (mA)
VDD = 3.6 V
6
100
IDD vs. TA Characteristics
0.3
0.2
0.1
0
–20
40
60
80
Ambient temperature TA (°C)
0
20
40
60
Ambient temperature TA (°C)
80
1.5
1
0.5
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
µPD16818
IIHL1 vs. VDD Characteristics
IIHL1 vs. VDD Characteristics
–0.1
–0.2
IN1, IN2, and INC pins
Input current IIH1, IIL1 (mA)
Input current IIH1, IIL1 (mA)
IN1, IN2, and INC pins
–0.08
IIL1
–0.06
–0.04
–0.02
IIH1
0
2.8
3
3.2
3.4
Supply voltage VDD (V)
–0.15
IIL1
–0.1
–0.05
0
3.6
IIH1
4
5
IIHL1 vs. TA Characteristics
IIHL1 vs. TA Characteristics
–0.1
–0.2
IN1, IN2, and INC pins
VIN = VDD = 3 V
–0.08
–0.06
Input current IIH1, IIL1 (mA)
Input current IIH1, IIL1 (mA)
6
Supply voltage VDD (V)
IIL1
–0.04
–0.02
IN1, IN2, and INC pins
VIN = VDD = 5 V
–0.15
–0.1
IIL1
–0.05
IIH1
IIH1
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
0
–20
0
20
40
60
80
Ambient temperature TA (°C)
7
µPD16818
IIHL2 vs. VDD Characteristics
IIHL2 vs. VDD Characteristics
0.2
PS pin
VIN = 0
0.08
Input current IIH2, IIL2 (mA)
Input current IIH2, IIL2 (mA)
0.1
IIH2
0.06
0.04
0.02
0
IIL2
3
3.2
3.4
Supply voltage VDD (V)
2.8
PS pin
VIN = 0
0.15
IIH2
0.1
0.05
0
3.6
IIL2
4
5
Supply voltage VDD (V)
IIHL2 vs. TA Characteristics
IIHL2 vs. TA Characteristics
0.2
PS pin
VIN = 0
VDD = 3 V
0.08
0.06
Input current IIH2, IIL2 (mA)
Input current IIH2, IIL2 (mA)
0.1
IIH2
0.04
0.02
PS pin
VIN = 0
VDD = 5 V
0.15
0.1
IIH2
0.05
IIL2
0
–20
8
6
0
20
40
60
Ambient temperature TA (°C)
IIL2
80
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
µPD16818
VIHL vs. VDD Characteristics
VIHL vs. VDD Characteristics
3
Input voltage VIH, VIL (V)
Input voltage VIHL (V)
2
1.5
1
0.5
0
2.8
3
3.2
3.4
Supply voltage VDD (V)
VIL
2
1.5
1
3.6
VIH
2.5
4
5
6
Supply voltage VDD (V)
VIHL vs. TA Characteristics
VIHL vs. TA Characteristics
2
3
VDD = 5 V
Input voltage VIH, VIL (V)
Input voltage VIHL (V)
VDD = 3 V
1.5
1
0.5
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
2.5
VIH
2
VIL
1.5
1
–20
0
20
40
60
Ambient temperature TA (°C)
80
9
µPD16818
RON vs. TA Characteristics
RON vs. TA Characteristics
2
H bridge ON resistance RON (Ω )
H bridge ON resistance RON (Ω )
2
VDD = VM = 3 V
RM = 20 Ω
1.5
1
0.5
0
–20
0
20
40
60
Ambient temperature TA (°C)
VDD = VM = 5 V
RM = 12 Ω
1.5
1
0.5
0
–20
80
0
Charge pump turn ON time tONG (ms)
Charge pump turn ON time tONG (ms)
10
VDD = VM = 3 V
RM = 12 Ω
0.6
0.4
0.2
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
tONG vs. TA Characteristics
tONG vs. TA Characteristics
1
0.8
20
40
60
Ambient temperature TA (°C)
80
1
VDD = VM = 5 V
RM = 20 Ω
0.8
0.6
0.4
0.2
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
µPD16818
tONH, tOFFH vs. TA Characteristics
H bridge switching time tONH, tOFFH ( µ s)
H bridge switching time tONH, tOFFH ( µ s)
tONH, tOFFH vs. TA Characteristics
2
tONH
VDD = VM = 3 V
RM = 12 V
1.5
1
0.5
tOFFH
0
–20
0
20
40
60
Ambient temperature TA (°C)
80
1
VDD = VM = 5 V
RM = 20 Ω
0.8
0.6
0.4
0.2
tOFFH
0
–20
VDD = VM = 3.3 V
RM = 12 Ω
2
1
100
200
300
400
Power-saving setting resistance Rx (kΩ)
0
20
40
60
Ambient temperature TA (°C)
80
Vx vs. Rx Characteristics
500
Vx voltage in power-saving mode Vx (V)
Vx voltage in power-saving mode Vx (V)
Vx vs. Rx Characteristics
3
0
tONH
4
VDD = VM = 5 V
RM = 12 Ω
3
2
1
0
100
200
300
400
Power-saving setting resistance Rx (kΩ)
500
11
µPD16818
PACKAGE DRAWINGS
20 PIN PLASTIC SOP (300 mil)
20
11
detail of lead end
P
1
10
A
H
I
G
J
L
C
D
M
M
B
K
N
E
F
NOTE
Each lead centerline is located within 0.12 mm (0.005 inch) of
its true position (T.P.) at maximum material condition.
ITEM
MILLIMETERS
INCHES
A
12.7±0.3
0.500±0.012
B
0.78 MAX.
0.031 MAX.
C
1.27 (T.P.)
0.050 (T.P.)
D
0.42 +0.08
–0.07
0.017 +0.003
–0.004
E
0.1±0.1
0.004±0.004
F
1.8 MAX.
0.071 MAX.
G
1.55±0.05
0.061±0.002
H
7.7±0.3
0.303±0.012
I
5.6±0.2
0.220 +0.009
–0.008
J
1.1
0.043
K
0.22 +0.08
–0.07
0.009 +0.003
–0.004
L
0.6±0.2
0.024 +0.008
–0.009
M
0.12
0.005
N
0.10
0.004
P
3° +7°
–3°
3° +7°
–3°
P20GM-50-300B, C-5
12
µPD16818
20 PIN PLASTIC SHRINK SOP (225mil)
20
11
detail of lead end
P
1
10
A
H
F
G
I
J
L
C
K
D
E
M
B
M
N
NOTE
Each lead centerline is located within 0.10 mm (0.004 inch) of
its true position (T.P.) at maximum material condition.
ITEM
MILLIMETERS
INCHES
A
6.7±0.3
0.264 +0.012
–0.013
B
0.575 MAX.
0.023 MAX.
C
0.65 (T.P.)
0.026 (T.P.)
D
0.22 +0.10
–0.05
0.009 +0.004
–0.003
E
0.1±0.1
0.004±0.004
F
1.45 MAX.
0.057 MAX.
G
1.15±0.1
0.045 +0.005
–0.004
H
6.4±0.2
0.252±0.008
I
4.4±0.1
0.173 +0.005
–0.004
J
1.0±0.2
0.039 +0.009
–0.008
K
0.15 +0.10
–0.05
0.006 +0.004
–0.002
L
0.5±0.2
0.020 +0.008
–0.009
M
0.10
0.004
N
0.10
0.004
P
3˚ +7˚
–3˚
3˚ +7˚
–3˚
P20GR-65-225C-2
13
µPD16818
RECOMMENDED SOLDERING CONDITIONS
Solder this product under the following recommended conditions.
For details of the recommended soldering conditions, refer to information document Semiconductor Device
Mounting Technology Manual (C10535E).
Surface Mount Type
µPD16818GS
20-pin plastic SOP (300 mil)
µPD16818GR-8JG
20-pin plastic SSOP (225 mil)
Soldering Method
Soldering Conditions
Symbol of Recommended
Soldering
Infrared reflow
Package peak temperature: 235°C, Time: 30 seconds MAX.(210°C MIN.),
Number of times: 3 MAX., Number of days: NoneNote, Flux: Rosin-based
flux with little chlorine component (chlorine: 0.2 Wt% MAX.)
IR35-00-3
VPS
Package peak temperature: 215°C, Time: 40 seconds MAX.(200°C MIN.),
Number of times: 3 MAX., Number of days: NoneNote, Flux: Rosin-based
flux with little chlorine component (chlorine: 0.2 Wt% MAX.)
VP15-00-3
Wave soldering
Package peak temperature: 260°C, Time: 10 seconds MAX., Preheating
temperature: 120 °C MAX., Number of times: 1, Flux: Rosin-based flux
with little chlorine component (chlorine: 0.2 Wt% MAX.)
WS60-00-1
Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C, 65 %
RH MAX.
Caution Do not use two or more soldering methods in combination.
14
µPD16818
[MEMO]
15
µPD16818
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5