NTE NTE179

NTE179
Germanium PNP Transistor
Audio Power Amplifier, High Current Switch
Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating
conditions.
Features:
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 0.5V (Max) @ IC = 5A
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter–Base Volatge, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106W
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 110°C
Storage Junction Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 110°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100mA, IB = 0
40
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100mA, IC = 0
2
–
–
V
Collector–Emitter Sustaining Voltage
VCE(sus)
IC = 5A
40
–
–
V
ICBO
VCB = 2V, IE = 0
–
–
200
µA
ICEX
VCE = 90V, VBE(off) = 0.2V
–
–
20
mA
ICER
VCE = 50V, REB = 100Ω
–
–
10
mA
Collector Cutoff Current
Collector–Emitter Cutoff Current
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
IC = 1A, VCE = 2V
65
–
300
IC = 5A, VCE = 2V
55
–
–
ON Characteristics
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 100mA
–
–
0.5
V
Base–Emitter ON Voltage
VBE(on)
IC = 1A, VCE = 2V
–
–
0.45
V
IC = 5A, VCE = 2V
–
–
0.60
V
500
–
–
kHz
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
IC = 500mA, VCE = 10V
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case