NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 50 nA Emitterr Cutoff Current IEBO VEB = 4V, IC = 0 – – 10 µA VCE = 10V, IC = 4mA – 80 160 µA VCE = 10V, IC = 1mA – 22 – µA Base Current IB Base–Emitter Voltage VBE VCE = 10V, IC = 4mA – 0.76 – V Transition Frequency fT VCE = 10V, IC = 1mA – 350 – MHz VCE = 10V, IC = 4mA – 450 – MHz VCE = 10V, IC = 8mA – 440 – MHz VCE = 10V, VEB = 0 – 0.1 – pF VCE = 10V, IC = 2mA, Gs = 16.7mS – 3.0 – dB VCE = 10V, IC = 5mA, Gs = 6.7mS, jBs = 5mS – 3.5 – dB Feedback Capacitance Noise Factor Crb F Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 125 – mS y–parameters (common base) Input Conductance gib VCB = 10V, IC = 4mA, f = 100MHz Input Capacitance Cib – 64 – pF Transfer Admittance |yfb| – 100 – mS Phase Angle of Transfer Admittance ϕfb – 147 – ° Output Conductance gob – 40 – µS Output Capacitance Cob – 1.25 – pF Feedback Admittance |yrb| – 220 – µS Phase Angle of Feedback Admittance ϕrb – 85 – ° .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)