MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com Features • Reduces Board Space • This is a Halide−Free Device • This is a Pb−Free Device COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter−Base Voltage VEBO 3.0 Vdc Symbol Max Unit 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W PD 640 mW 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 265 2.1 mW January, 2009 − Rev. 0 3 mW/°C 2 1 AJ M 1 SOT−723 CASE 631AA STYLE 1 AJ M = Specific Device Code = Date Code ORDERING INFORMATION Device MMBTH10M3T5G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2009 MARKING DIAGRAM Package Shipping† SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTH10M3/D MMBTH10M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 − − Vdc Collector−Base Breakdown Voltage (IC = 100 μAdc, IE = 0) V(BR)CBO 30 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 μAdc, IC = 0) V(BR)EBO 3.0 − − Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO − − 100 nAdc Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO − − 100 nAdc 60 − − VCE(sat) − − 0.5 Vdc VBE − − 0.95 Vdc 650 − − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) − SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT MHz Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − − 0.7 pF Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Crb − − 0.65 pF rb′Cc − − 9.0 ps Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) http://onsemi.com 2 MMBTH10M3T5G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE 0 70 gib -10 60 -20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 -bib 40 30 1000 MHz -30 700 -40 20 400 10 0 200 -50 100 200 300 400 500 f, FREQUENCY (MHz) 700 -60 1000 0 10 20 Figure 1. Rectangular Form 30 40 50 gib (mmhos) 60 100 70 80 Figure 2. Polar Form 70 60 bfb 60 400 200 50 50 600 100 40 700 -gfb 30 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 40 30 1000 MHz 0 -10 20 -20 -30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 Figure 3. Rectangular Form 60 50 40 30 20 10 gfb (mmhos) 0 Figure 4. Polar Form http://onsemi.com 3 -10 -20 -30 MMBTH10M3T5G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) 0 5.0 100 4.0 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) yrb, REVERSE TRANSFER ADMITTANCE 3.0 -brb -brb 2.0 -1.0 200 -2.0 400 -3.0 700 MPS H10 1.0 -4.0 -grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 1000 MHz 700 -5.0 -2.0 -1.8 -1.2 -0.8 1000 Figure 5. Rectangular Form -0.4 0.4 0 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 8.0 8.0 7.0 700 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 9.0 6.0 5.0 bob 4.0 6.0 4.0 400 3.0 200 2.0 2.0 gob 1.0 100 0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 0 1000 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form http://onsemi.com 4 8.0 10 MMBTH10M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 1 e 2 E HE L b 2X 0.08 (0.0032) X Y C STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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