NTE NTE2594

NTE2594
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Pulsed (PW ≤ 300µs, Duty Cycle ≤ 10%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 500V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 5V, IC = 1.2A
15
–
50
VCE = 5V, IC = 6A
8
–
–
fT
VCE = 10V, IC = 1.2A
–
18
–
MHz
Cob
VCB = 10V, f = 1MHz
–
160
–
pF
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.2A
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.2A
–
–
1.5
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
800
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 5mA, RBE = ∞
500
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
7
–
–
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Sustaining Voltage
Symbol
VCEX(sus) IC = 5A, IB1 = IB2 = 2A, L = 500µH,
Clamped
Turn–On Time
ton
Storage Time
tstg
Fall Time
Test Conditions
Min
Typ
500
–
–
V
–
–
0.5
µs
–
–
3.0
µs
–
–
0.3
µs
5IB1 = –2.5IB2 = IC = 7A,
VCC = 200V, RL = 28.6Ω
Ω
tf
.221 (5.6)
Max Unit
.134 (3.4) Dia
.630 (16.0)
.123 (3.1)
.315
(8.0)
C
.866
(22.0)
B
C
E
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)