NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz D High Current–Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TC = +75°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1. Total Device Dissipation at TA = +25°C is 1 Watt. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 5mA, IB = 0 20 – – V VCER(sus) IC = 5mA, RBE = 10Ω, Note 2 40 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 15V, IB = 0 – – 20 µA ICEX VCE = 15V, VBE = –1.5V, TC = +150°C – – 5 mA VCE = 35V, VBE = –1.5V – – 5 mA VBE = 3V, IC = 0 – – 100 µA IEBO Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 360mA, VCE = 5V 5 – – IC = 50mA, VCE = 15V 40 – 120 1200 – – MHz ON Characteristics DC Current Gain hFE Dynamic Characteristics Current–Gain Bandwidth Product fT IC = 50mA, VCE = 15V, f = 200MHz Collector–Base Capacitance Ccb VCB = 15V, IE = 0, f = 1MHz – 1.8 3.5 pF Noise Figure NF IC = 10mA, VCE = 15V, f = 200MHz – 3 – dB Common–Emitter Amplifier Voltage Gain Gve IC = 50mA, VCC = 15V, f = 50 to 216MHz 11 – – dB Power Input Pin IC = 50mA, VCC = 15V, RS = 50Ω, Pout = 1.26mW, f = 200MHz – – 0.1 mW Functional Test .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)