NTE NTE396

NTE396
Silicon NPN Transistor
Power Amplifier & High Speed Switch
(Compl to NTE397)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1
Collector Cutoff Current
Emitter Cutoff Current
350
–
–
V
ICEO
VCE = 300V, IB = 0
–
–
20
µA
ICEX
VCE = 450V, VBE = 1.5V
–
–
500
µA
ICBO
VCB = 360V, IE = 0
–
–
20
µA
IEBO
VEB = 6V, IC = 0
–
–
20
µA
hFE
IC = 2mA, VCE = 10V
30
–
–
IC = 20mA, VCE = 10V
40
–
160
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 4mA
–
–
0.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 4mA
–
–
1.3
V
Note 1. Pulse Test; Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
CAUTION: The sustaining voltage must not be measured on a curve tracer.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
fT
IC = 10mA, VCE = 10V, f = 50MHz
15
–
–
MHz
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
–
–
10
pF
Input Capacitance
Cibo
VCB = 5V, IC = 0, f = 1MHz
–
–
75
pF
Small–Signal Current Gain
hfe
IC = 5mA, VCE = 10V, f = 1MHz
25
–
–
Re(hie)
VCE = 10V, IC = 5mA, f = 1MHz
–
–
300
Real Part of Input Impedance
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45°
.031 (.793)
Ω