NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages in VHF equipment. Features: D Specified 175MHz, 28V Characteristics: Output Power: 2.5W Minimum Gain: 10dB Efficiency: 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 4 – – V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 30V, IB = 0 – – 0.1 mA ICEX VCE = 30V, VBE(off) = 1.5V, TC = +200°C – – 5.0 mA VCE = 65V, VBE(off) = 1.5V – – 1.0 mA VBE = 4V, IC = 0 – – 0.1 mA IEBO Note 1. Pulsed thru a 25mH inductor. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 250mA, VCE = 5V 10 – – VCE(sat) IC = 250mA, IB = 50mA – – 1.0 V IC = 100mA, VCE = 28V, f = 100MHz – 500 – MHz Cob VCB = 30V, IE = 0, f = 100kHz – 8.0 10.0 pF Power Input Pin VCE = 28V, Pout = 2.5W, f = 175MHz – – 0.25 W Common–Emitter Amplifier Power Gain Gpe 10 – – dB η 50 – – % Collector–Emitter Saturation Voltage Dynamic Characteristics Current Gain – Bandwidth Product fT Output Capacitance Functional Tests Collector Efficiency .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45° .031 (.793)