326

NTE326
Silicon P−Channel JFET Transistor
General Purpose AF Amplifier
TO92 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +135C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
40
−
−
V
VGS = 20V, VDS = 0
−
−
5
nA
VGS = 20V, VDS = 0, TA = +100C
−
−
1
A
ID = 1A, VDS = 15V
1.0
−
7.5
V
VGS
ID = 0.2mA, VDS = 15V
0.8
−
4.5
V
IDSS
VDS = 15V, VGS = 0, f = 1kHz
2
−
9
mA
Forward Transfer Admittance
|yfs|
VDS = 15V, VGS = 0, f = 1kHz
1500
−
5000
mho
Output Admittance
|yos|
VDS = 15V, VGS = 0, f = 1kHz
−
−
75
mho
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
−
5
7
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
−
1
2
pF
Noise Figure
NF
VDS = 15V, VGS = 0, RG = 1M,
f = 100Hz, BW = 1Hz
−
1.0
2.5
dB
Equivalent Short−Circuit Input Noise
Voltage
en
VDS = 15V, VGS = 0, f = 100Hz,
BW = 1Hz
−
60
115
nV/pHz
OFF Characteristics
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
Gate−Source Voltage
V(BR)GSS IG = 10A, VDS = 0
IGSS
VGS(off)
ON Characteristics
Zero−Gate−Voltage Drain Current
Small−Signal Characteristics
Functional Characteristics
Rev. 2−16
D
G
S
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
S D G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max