VISHAY 10WT10FNTR

VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
I-PAK (TO-251AA)
D-PAK (TO-252AA)
Base
cathode
4
Base
cathode
4
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
3
1
Anode
2 Anode
Cathode
2
1 Cathode 3
Anode
Anode
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
VS-10UT10
VS-10WT10FN
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
APPLICATIONS
Package
I-PAK (TO-251AA),
D-PAK (TO-252AA)
IF(AV)
10 A
VR
100 V
VF at IF
0.66 V
IRM max.
4 mA at 125 °C
TJ max.
175 °C
Diode variation
Single die
EAS
54 mJ
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
100
V
VRRM
VF
10 Apk, TJ = 125 °C (typical)
TJ
Range
0.615
V
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
VS-10UT10
VS-10WT10FN
UNITS
100
V
TJ = 25 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 3 A, L = 12 mH
IAR
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
Repetitive avalanche current
50 % duty cycle at TC = 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied (1)
VALUES
UNITS
10
A
610
A
110
54
mJ
IAS at
TJ max.
A
Note
(1) Measured connecting 2 anode pins
Revision: 02-Nov-11
Document Number: 94647
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
5A
TJ = 25 °C
10 A
VFM (1)(2)
Forward voltage drop
-
UNITS
0.735
0.810
0.840
0.890
5A
0.530
-
0.615
0.660
0.730
0.770
-
50
μA
TJ = 125 °C
20 A
TJ = 25 °C
IRM (1)
MAX.
20 A
10 A
Reverse leakage current
TYP.
0.630
VR = Rated VR
TJ = 125 °C
V
-
4
mA
Junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
400
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
-
10 000
V/μs
Maximum voltage rate of change
dV/dt
Rated VR
Notes
(1) Pulse width < 300 μs, duty cycle < 2 %
(2) Only 1 anode pin connected
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Typical thermal resistance,
case to heatsink
RthCS
UNITS
- 55 to 175
°C
DC operation
2
°C/W
0.3
Approximate weight
Marking device
0.3
g
0.01
oz.
Case style I-PAK
10UT10
Case style D-PAK
10WT10FN
100
100
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
VALUES
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.2
175 °C
10
150 °C
125 °C
1
100 °C
0.1
75 °C
0.01
50 °C
25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Nov-11
Document Number: 94647
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
180
175
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
170
DC
165
160
155
Square wave (D = 0.50)
80 % rated VR applied
150
180°
120°
90°
60°
30°
8
6
RMS limit
4
DC
2
See note (1)
0
145
0
2
4
6
8
10
12
14
16
0
3
6
9
12
15
IF(AV) Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 02-Nov-11
Document Number: 94647
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
IFSM - Non-Repetitive Surge Current (A)
www.vishay.com
Vishay Semiconductors
1000
100
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Avalanche Current (A)
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Avalanche Energy (mJ)
100
10
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 02-Nov-11
Document Number: 94647
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
U
T
10
FN
TRL
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (10 A)
3
-
Package:
U = I-PAK
W = D-PAK
4
-
T = Trench
5
-
Voltage code (100 V)
6
-
TO-252AA (D-PAK)
7
-
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
I-PAK (TO-251AA)
www.vishay.com/doc?95024
D-PAK (TO-252AA)
www.vishay.com/doc?95448
I-PAK (TO-251AA)
www.vishay.com/doc?95025
D-PAK (TO-252AA)
www.vishay.com/doc?95059
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95026
Revision: 02-Nov-11
Document Number: 94647
5
For technical questions within your region: [email protected]om, [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
I-PAK - S
DIMENSIONS FOR I-PAK - S in millimeters
E
A
b3
E1
c2
3
1
2
L
L5
L4
H
D
D1
4
b2
e
c
e
SYMBOL
DIMENSIONAL REQUIREMENTS
MIN.
NOM.
MAX.
E
6.40
6.60
6.70
L
3.98
4.13
4.28
L4
0.66
0.76
0.86
L5
1.96
2.16
2.36
D
6.00
6.10
6.20
H
11.05
11.25
11.45
b
0.64
0.76
0.88
b2
0.77
0.84
1.14
b3
5.21
5.34
5.46
b4
0.41
0.51
0.61
e
A
Document Number: 95024
Revision: 24-May-11
b4
b
2.286 BSC
2.20
2.30
2.38
c
0.40
0.50
0.60
c2
0.40
0.50
0.60
D1
5.30
-
-
E1
4.40
-
-
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000