VISHAY 10WT10FNTR

VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
I-PAK (TO-251AA)
D-PAK (TO-252AA)
Base
cathode
4
Base
cathode
4
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
3
1
Anode
2 Anode
Cathode
2
1 Cathode 3
Anode
Anode
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
VS-10UT10
VS-10WT10FN
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
APPLICATIONS
Package
I-PAK (TO-251AA),
D-PAK (TO-252AA)
IF(AV)
10 A
VR
100 V
VF at IF
0.66 V
IRM max.
4 mA at 125 °C
TJ max.
175 °C
Diode variation
Single die
EAS
54 mJ
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
100
V
VRRM
VF
10 Apk, TJ = 125 °C (typical)
TJ
Range
0.615
V
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
VS-10UT10
VS-10WT10FN
UNITS
100
V
TJ = 25 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 3 A, L = 12 mH
IAR
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
Repetitive avalanche current
50 % duty cycle at TC = 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied (1)
VALUES
UNITS
10
A
610
A
110
54
mJ
IAS at
TJ max.
A
Note
(1) Measured connecting 2 anode pins
Revision: 02-Nov-11
Document Number: 94647
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
5A
TJ = 25 °C
10 A
VFM (1)(2)
Forward voltage drop
-
UNITS
0.735
0.810
0.840
0.890
5A
0.530
-
0.615
0.660
0.730
0.770
-
50
μA
TJ = 125 °C
20 A
TJ = 25 °C
IRM (1)
MAX.
20 A
10 A
Reverse leakage current
TYP.
0.630
VR = Rated VR
TJ = 125 °C
V
-
4
mA
Junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
400
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
-
10 000
V/μs
Maximum voltage rate of change
dV/dt
Rated VR
Notes
(1) Pulse width < 300 μs, duty cycle < 2 %
(2) Only 1 anode pin connected
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Typical thermal resistance,
case to heatsink
RthCS
UNITS
- 55 to 175
°C
DC operation
2
°C/W
0.3
Approximate weight
Marking device
0.3
g
0.01
oz.
Case style I-PAK
10UT10
Case style D-PAK
10WT10FN
100
100
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
VALUES
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.2
175 °C
10
150 °C
125 °C
1
100 °C
0.1
75 °C
0.01
50 °C
25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Nov-11
Document Number: 94647
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
180
175
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
170
DC
165
160
155
Square wave (D = 0.50)
80 % rated VR applied
150
180°
120°
90°
60°
30°
8
6
RMS limit
4
DC
2
See note (1)
0
145
0
2
4
6
8
10
12
14
16
0
3
6
9
12
15
IF(AV) Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 02-Nov-11
Document Number: 94647
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
IFSM - Non-Repetitive Surge Current (A)
www.vishay.com
Vishay Semiconductors
1000
100
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Avalanche Current (A)
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Avalanche Energy (mJ)
100
10
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 02-Nov-11
Document Number: 94647
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
U
T
10
FN
TRL
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (10 A)
3
-
Package:
U = I-PAK
W = D-PAK
4
-
T = Trench
5
-
Voltage code (100 V)
6
-
TO-252AA (D-PAK)
7
-
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
I-PAK (TO-251AA)
www.vishay.com/doc?95024
D-PAK (TO-252AA)
www.vishay.com/doc?95448
I-PAK (TO-251AA)
www.vishay.com/doc?95025
D-PAK (TO-252AA)
www.vishay.com/doc?95059
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95026
Revision: 02-Nov-11
Document Number: 94647
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
I-PAK - S
DIMENSIONS FOR I-PAK - S in millimeters
E
A
b3
E1
c2
3
1
2
L
L5
L4
H
D
D1
4
b2
e
c
e
SYMBOL
DIMENSIONAL REQUIREMENTS
MIN.
NOM.
MAX.
E
6.40
6.60
6.70
L
3.98
4.13
4.28
L4
0.66
0.76
0.86
L5
1.96
2.16
2.36
D
6.00
6.10
6.20
H
11.05
11.25
11.45
b
0.64
0.76
0.88
b2
0.77
0.84
1.14
b3
5.21
5.34
5.46
b4
0.41
0.51
0.61
e
A
Document Number: 95024
Revision: 24-May-11
b4
b
2.286 BSC
2.20
2.30
2.38
c
0.40
0.50
0.60
c2
0.40
0.50
0.60
D1
5.30
-
-
E1
4.40
-
-
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000