4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .327 (8.30) MAX .270 (6.86) .248 (6.30) 1 .380 (9.64) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. 2 FEATURES .187 (4.75) .175 (4.45) 0 to 15° ■ ■ .158 (4.01) .144 (3.68) .200 (5.10) MAX Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% .020 (.51) MIN .154 (3.90) .120 (3.05) .022 (.56) .015 (.40) H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .100 (2.54) TYP APPLICATIONS 1 4 COLLECTOR 2 3 EMITTER ANODE 1 4 COLLECTOR CATHODE 2 3 EMITTER Equivalent Circuit (H11AA814) Equivalent Circuit (H11A817) NOTE: ALL DIMENSIONS ARE IN INCHES (mm) PACKAGE CODE T H11AA814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface H11A817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Industrial controls ABSOLUTE MAXIMUM RATING TOTAL PACKAGE Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C Operating temperature . . . . . . . . . . . . . . . -55° to 100° C Lead solder temperature . . . . . . . . . . . 260° C for 10 sec Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW INPUT DIODE Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V OUTPUT TRANSISTOR Power dissipation (25° C ambient) . . . . .150 mW Derate linearly (above 25° C) . . . . . .2.0 mW/° C VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Continuous collector current . . . . . . . . . . 50 mA 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS ELECTRO-OPTICAL CHARACTERISTICS (TA = 25° C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise) PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS INPUT DIODE Forward voltage H11A817 VF 1.2 1.5 V IF = 20 mA H11AA814 VF 1.2 1.5 V IF = ±20 mA IR .001 10 µA VR = 5 V Reverse current H11A817 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVCEO 35 100 V IC = 1 mA, IF = 0 Emitter to collector BVECO 6 10 V IE = 100 µA, IF = 0 nA VCE = 10 V, IF = 0 pF VCE = 0 V, f = 1 MHz UNITS TEST CONDITIONS Collector dark current ICEO .025 Capacitance CCE 8 100 TRANSFER CHARACTERISTICS CHARACTERISTIC SYMBOL MIN TYP MAX DC current transfer ratio H11AA814 CTR 20 300 % IF = ±1 mA,VCE = 5V H11AA814A CTR 50 150 % IF = ±1 mA,VCE = 5V H11A817 CTR 50 600 % IF = 5 mA,VCE = 5V H11A817A CTR 80 160 % H11A817B CTR 130 260 % H11A817C CTR 200 400 % H11A817D CTR 300 600 % Saturation Voltage VCE (SAT) 0.1 0.2 V IF = (±)20 mA, IC = 1 mA Rise time (non saturated) tr 2.4 18 µs IC = 2 mA, VCE = 2 V, RL = 100 Ω Fall time (non saturated) tf 2.4 18 µs IC = 2 mA, VCE = 2 V, RL = 100 Ω TYP MAX ISOLATION CHARACTERISTICS CHARACTERISTIC SYMBOL Steady-state isolation voltage VISO Isolation resistance RISO Isolation capacitance CISO MIN 5300 11 10 0.5 UNITS TEST CONDITIONS VRMS 1 Minute Ω VI-O = 500 VDC pF VI-O = Ø, f = 1 MHz 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS TYPICAL CHARACTERISTICS 1.2 1.4 IF = 10 mA NORMALIZED CTR 1 0.8 0.6 0.4 CTR Normalized @ IF = 5 mA, VCE = 5 V, Ta = 25° C NORMALIZED CTR CTR Normalized @ IF = 5 mA, VCE = 5 V, Ta = 25° C 1.2 1 IF = 5 mA 0.8 0.6 0.2 0 0.4 0 5 10 15 20 25 30 -50 -25 0 FORWARD CURRENT – IF (mA) +25 +50 +75 +100 AMBIENT TEMPERATURE (° C) FIG. 2 - Normalized CTR vs. Ambient Temperature FIG. 1 - Normalized CTR vs. Forward Current .14 IF = 20 mA 1.7 IC = 1 mA .12 1.5 FORWARD VOLTAGE – VF (V) .1 VCE ( SAT) (V) .08 .06 .04 T = -55° C 1.1 T = -25° C 0.9 T = 100° C 0.7 .02 0 -50 1.3 0.5 -25 0 25 50 75 100 125 0.1 0.2 0.5 1.0 2.0 5 10 AMBIENT TEMPERATURE (° C) FORWARD CURRENT – IF (mA) FIG. 3 - VCE (SAT) vs. Ambient Temperature FIG. 4 - Forward Voltage vs. Forward Current 20 50 100 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS TYPICAL CHARACTERISTICS 10 25 VCE = 10 V 1 IF = 20 mA 10-1 15 ICEO (mA) COLLECTOR CURRENT IC (mA) 20 IF = 10 mA 10-2 10-3 10 10-4 IF = 5 mA 5 10-5 IF = 1 mA 0 0 1 2 3 4 5 6 7 8 9 10-6 10 0 25 COLLECTOR–EMITTER VOLTAGE VCE (V) 50 75 100 125 AMBIENT TEMPERATURE (° C) FIG. 6 - Collector Leakage Current vs. Ambient Temperature FIG. 5 - Collector Current vs. Collector-Emitter Voltage 1000 IF = 5 mA VCC = 5 V Ta = 25° C Toff Tf SWITCHING SPEED (mS) 100 10 Ton 1 Tr 0.1 0.1 1 10 100 R-LOAD RESISTOR (k Ω) FIG. 7 - Switching Speed vs. Load Resistor (TYP) Call QT Optoelectronics for more information or the phone number of your nearest distributor. United States 800-533-6786 France 33 01/43.99.25.12 Germany 49 089/96.30.51 United Kingdom 44 [0] 1296/39.44.99 Asia/Pacific 603/735-2417 ■ © 1996 QT Optoelectronics QT-012-A ■ ■ ■ DS 104