RFMD RF2480

RF2480
5
DIRECT QUADRATURE MODULATOR
Typical Applications
• Dual-Band CDMA Base Stations
• W-CDMA Base Stations
• TDMA/TDMA-EDGE Base Stations
• WLAN and WLL Systems
• GSM-EDGE/EGSM Base Stations
• TETRA Systems
Product Description
-A-
0.050
ü
Si Bi-CMOS
GaAs MESFET
SiGe HBT
Si CMOS
0.068
0.053
0.244
0.229
8° MAX
0° MIN
Optimum Technology Matching® Applied
GaAs HBT
5
0.018
0.014
0.393
0.386
0.034
0.016
Si BJT
0.008
0.004
MODULATORS AND
UPCONVERTERS
The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for highfrequency AM, PM, or compound carriers. This low-cost
IC features excellent linearity, noise floor, and over-temperature carrier suppression performance. The device
implements differential amplifiers for the modulation
inputs, 90° carrier phase shift network, carrier limiting
amplifiers, two matched double-balanced mixers, summing amplifier, and an output RF amplifier which will drive
50Ω from 800MHz to 2500MHz. Component matching is
used to obtain excellent amplitude balance and phase
accuracy.
0.157
0.150
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity - 0.005 with
respect to datum "A".
Package Style: SOIC-16
Features
• Typical Carrier Suppression>35dBc over
I REF
1
16
I S IG
Q REF
2
15
Q S IG
• Single 5V Power Supply
GND2
3
14
GND1
• Integrated RF quadrature network
GND2
4
13
GND1
• Digitally controlled Power Down mode
GND2
5
12
GND1
• 800MHz to 2500MHz operation
LO
6
11
VCC2
10
GND1
9
RF OUT
Σ
-4 5 °
temperature with highly linear operation
+45°
VCC1
PD
7
8
POW ER
CONTROL
Functional Block Diagram
Rev A3 011019
Ordering Information
RF2480
RF2480 PCBA
Direct Quadrature Modulator
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
5-29
RF2480
Absolute Maximum Ratings
Parameter
Supply Voltage
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
Parameter
Rating
Unit
-0.5 to +7.5
+10
-40 to +85
-40 to +150
VDC
dBm
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
T=25°C, VCC =5V
Carrier Input
MODULATORS AND
UPCONVERTERS
5
Frequency Range
Power Level
Input VSWR
Condition
800
-6
2500
+6
MHz
dBm
4.5:1
2:1
2:1
At 900MHz unmatched
At 1800MHz unmatched
At 2500MHz unmatched
Modulation Input
Frequency Range
Reference Voltage (VREF)
Maximum Modulation (I&Q)
Gain Asymmetry
Quadrature Phase Error
Input Resistance
Input Bias Current
DC
250
40
MHz
V
V
dB
°
kΩ
µA
+2
dBm
3.0
VREF ±1.0
0.2
3
30
RF Output (~800MHz)
Maximum Output Power
-3
0
High-Linearity Output Power
-6
-5
dBm
Adjacent Channel
Power Rejection
Output P1dB
IM3 Suppression
-47
-52
dBc
+2
-39
+3
-40
dBm
dBc
IM5 Suppression
-49
-59
dBc
IM7 Suppression
-49
-71
dBc
Carrier Suppression
Sideband Suppression
Broadband Noise Floor
-25
-25
-30
-30
-150
dBc
dBc
dBm/Hz
5-30
-145
LO=800MHz, -5dBm; SSB
TETRA I&Q Amplitude=2VPP
Over operating temperature.
TETRA I&Q Amplitude=1.1VPP with an
ACPR of -47dBc. Over operating temperature.
TETRA modulation applied with
POUT =-5dBm. Over operating temperature.
Over operating temperature.
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
2kHz offset (9kHz, 11kHz) at -6dBm/tone.
Over operating temperature.
Unadjusted performance.
Unadjusted performance.
26MHz offset with TETRA signal applied
POUT =-5dBm.
Rev A3 011019
RF2480
Specification
Min.
Typ.
Max.
Unit
RF Output (~900MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
Sideband Suppression
0
+4
-11
50
dBm
dBm
dB
35
dB
50
dB
35
dB
13-j:25
-153.0
Ω
dBm/Hz
-3
-17
50
dBm
dBm
dB
35
dB
50
dB
40
dB
Output Impedance
Broadband Noise Floor
RF Output (~2000MHz)
Maximum Output Power
High-Linearity Output Power
Carrier Suppression
Sideband Suppression
-7
Output Impedance
Broadband Noise Floor
Ω
dBm/Hz
58-j11
-158.0
Condition
LO=880MHz, -5dBm; SSB
I&Q Amplitude=2VPP
I&Q Amplitude=0.325VPP
T=25°C; POUT =-11dBm (meets CDMA base
station requirements); optimized I,Q DC offsets
Over Temperature (Temperature cycled from
-40°C to +85°C after optimization at
T=25°C; POUT =-11dBm)
T=25°C; POUT =-11dBm; optimized I,Q DC
offsets
Over Temperature (Temperature cycled from
-40°C to +85°C after optimization at
T=25°C; POUT =-11dBm)
At 20MHz offset, VCC =5V; Tied to VREF:
ISIG, QSIG, IREF, and QREF.
LO=2000MHz, -5dBm; SSB
I&Q Amplitude=2VPP
I&Q Amplitude=0.325VPP
T=25°C; POUT =-17dBm; optimized I,Q DC
offsets
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; POUT =-17dBm
T=25°C; POUT =-17dBm; optimized I,Q DC
offsets
Temperature cycled from -40°C to +85°C
after optimization at T=25°C; POUT =-17dBm
At 20MHz offset, VCC =5V; Tied to VREF:
ISIG, QSIG, IREF, and QREF.
Power Down
Turn On/Off Time
PD Input Resistance
Power Control “ON”
Power Control “OFF”
100
50
2.8
1.0
1.2
ns
kΩ
V
V
Threshold voltage
Threshold voltage
V
V
mA
µA
Specifications
Operating Limits
Operating
Power Down
Power Supply
Voltage
5
4.5
Current
6.0
50
25
Rev A3 011019
5-31
5
MODULATORS AND
UPCONVERTERS
Parameter
RF2480
Pin
1
2
Function
I REF
Q REF
MODULATORS AND
UPCONVERTERS
5
Description
Reference voltage for the I mixer. This voltage should be the same as
the DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended. The SIG and REF inputs are inputs of a differential amplifier.
Therefore the REF and SIG inputs are interchangeable. If swapping the
I SIG and I REF pins, the Q SIG and Q REF also need to be swapped
to maintain the correct phase. It is also possible to drive the SIG and
REF inputs in a balanced mode. This will increase the gain.
For optimum carrier suppression, the DC voltages on I REF, Q REF, I
SIG and Q SIG should be adjusted slightly to compensate for inherent
undesired internal DC offsets; for optimum sideband suppression,
phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should
be adjusted slightly to compensate for inherent undesired internal offsets. See RFMD AN0001 for more detail.
Reference voltage for the Q mixer. This voltage should be the same as
the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended. See pin 1 for more details.
Interface Schematic
I SIG
I REF
100 Ω
100 Ω
425 Ω
425 Ω
Q SIG
Q REF
100 Ω
100 Ω
425 Ω
3
GND2
4
5
6
GND2
GND2
LO
7
VCC1
8
PD
9
RF OUT
425 Ω
Ground connection of the LO phase shift network. This pin should be
connected directly to the ground plane.
Same as pin 3.
Same as pin 3.
The input of the phase shifting network. This pin has an internal DC
blocking capacitor. This port is voltage driven so matching at different
frequencies is not required.
Power supply for all circuits except the RF output stage. An external
capacitor is needed if no other low frequency bypass capacitor is
nearby.
Power Down control. When this pin is "low", all circuits are shut off. A
"low" is typically 1.2V or less at room temperature.When this pin is
"high" (VCC), all circuits are operating normally. If PD is below VCC, output power and performance will be degraded. Operating in this region
is not recommended, although it might be useful in some applications
where power control is required.
RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power.
LO
VCC
200 Ω
PD
RF OUT
10
GND3
11
VCC2
12
GND1
13
14
GND1
GND1
5-32
Ground connection for the RF output stage. This pin should be connected directly to the ground plane.
Power supply for the RF output amplifier. An external capacitor is
needed if no other low frequency bypass capacitor is near by.
Ground connection for the LO and baseband amplifiers, and for the
mixers. This pin should be connected directly to the ground plane.
Same as pin 12.
Same as pin 12.
Rev A3 011019
RF2480
16
Function
Q SIG
I SIG
Description
Interface Schematic
Baseband input to the Q mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output
power) must be reduced appropriately. The recommended DC level for
this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak
modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should
never exceed 4.0V. See pin 1 for more details.
Q SIG
Q REF
100 Ω
425 Ω
Baseband input to the I mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
of 2V; for highly linear operation, the input signal (and output power)
must be reduced appropriately. The recommended DC level for this pin
is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation
amplitude) should never drop below 2.0V. The peak maximum voltage
on this pin (VREF + peak modulation amplitude) should never exceed
4.0V. See pin 1 for more details.
100 Ω
425 Ω
I SIG
I REF
100 Ω
425 Ω
100 Ω
425 Ω
5
MODULATORS AND
UPCONVERTERS
Pin
15
Application Schematic
DC-Coupled
I R EF
1 00 n F
Q REF
1 00 n F
1
16
I S IG
2
15
Q S IG
3
14
4
LO IN
Σ
12
5
VCC
6
13
-4 5°
11
+45°
1 00 n F
10
7
8
POW ER
CONTROL
VCC
9
10 0 nF
RF OUT
PD
1 00 n F
Rev A3 011019
5-33
RF2480
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P2
P1
P1-1
1
VCC
1
REF
2
GND
2
GND
3
NC
3
NC
P2-1
50 Ω µstrip
P2-1
C1
100 nF
MODULATORS AND
UPCONVERTERS
5
1
16
2
15
3
14
4
Σ
5
LO IN
J1
50 Ω µstrip
I SIG
J4
Q SIG
J3
13
12
50 Ω µstrip
6
-45°
11
+45°
P1-1
7
C2
100 nF
8
C3
100 nF
P1-1
10
POWER
CONTROL
50 Ω µstrip
9
RF OUT
J2
2480400-
5-34
Rev A3 011019
RF2480
Evaluation Board Layout
Board Size 1.510” x 1.510”
Board Thickness 0.031”, FR-4
MODULATORS AND
UPCONVERTERS
5
Rev A3 011019
5-35
MODULATORS AND
UPCONVERTERS
RF2480
5
5-36
Rev A3 011019