2SC5333 Silicon NPN Triple Diffused Planar Transistor A hFE mA V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF –55to+150 °C Tstg 1.35±0.15 1.35±0.15 0.1 –0.2 1 0 0 1 2 A /s to p 3 4.0typ 1.0typ 2 1 0 0.1 0.2 (V C E =4V) 200 Typ 50 10 1000 2000 Collector Current I C (mA) 125 100 ˚C Transient Thermal Resistance DC Cur rent Gain h FE DC Cur rent Gain h FE 200 100 0.2 25˚C 50 10 3 –30 5 10 ˚C 50 100 0.4 1.0 500 1000 2000 1 0.5 0.3 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating 35 30 W ith In fin ite 20 he at si nk Ma ximum Po we r Dissipatio n P C ( W) 20 10 0.8 4 (V C E =12V) Typ 0.6 θ j-a – t Characteristics Collector Current I C (mA) f T – I E Characteristics (Typical) Cu t-of f Fr eque ncy f T (MH Z ) 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 10 0 0.3 Base Current I B (A) h FE – I C Characteristics (Typical) 3 1 2A I C =1A Collector-Emitter Voltage V C E (V) 100 (V CE =4V) 2 3 0 4 I C – V BE Temperature Characteristics (Typical) mp) mA I B =2 0m 0.3typ Weight : Approx 2.0g a. Type No. b. Lot No. B C E e Te Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 2 I tf (µs) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 200 B= tstg (µs) (Cas –5 1.0 ton (µs) IB2 (A) 125˚C 100 IB1 (A) Collector Current I C (A) 100 VB2 (V) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚ C/W) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b p) 2 1.0max 300min 4.2±0.2 2.8 c0.5 mp) IC VEB=6V IC=25mA 10.1±0.2 ase Te V(BR)CEO mA ase Tem IEBO V Unit 1.0max –30˚C (C V 6 2SC5333 VCB=300V 4.0±0.2 300 VEBO Conditions 0.8±0.2 VCEO Symbol ±0.2 ICBO 25˚C (C V 3.9 Unit 300 16.9±0.3 2SC5333 VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Series Regulator, Switch, and General Purpose 10 Without Heatsink 0 –0.003 –0.01 –0.05 –0.1 Emitter Current I E (A) 134 –0.5 –1 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150