GF6968A Common-Drain Dual N-Channel MOSFET Low VGS(th) VDS 20V RDS(ON) 22mΩ ID 6.2A H C EN ET R T ENF G TSSOP-8 ® 0.122 (3.10) 0.114 (2.90) t c u rod P New S2 S2 G2 8 7 6 5 1 2 3 4 D S1 S1 G1 0.005 (0.127) 0.028 (0.70) 0.020 (0.50) 5 8 D 0.177 (4.50) 0.170 (4.30) 0.028 (0.70) 0.020 (0.50) 0.260 (6.60) 0.244 (6.20) 1 4 0.260 (6.60) min. 0.025 (0.65) 0 °– 8 ° 0.012 (0.30) 0.010 (0.25) 0.012 (0.30) 0.010 (0.25) 0.047 (1.20) 0.041 (1.05) 0.025 (0.65) Mounting Pad Layout Dimensions in inches and (millimeters) 0.006 (0.15) 0.002 (0.05) 0.204 (5.20) Mechanical Data Features Case: TSSOP-8 Package Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li-ion battery packs use • Designed for battery-switch applications Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)(1) Pulsed Drain Current TA = 25°C TA = 70°C Maximum Power Dissipation(1) Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. A = 25°C unless otherwise noted) Limit Unit VDS 20 VGS ±12 ID 6.2 A IDM 30 A PD 1.5 0.96 W TJ, Tstg –55 to 150 °C RθJA 83 °C/W V 4/11/01 GF6968A Common-Drain Dual N-Channel MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.6 – – V IGSS VGS = ± 12V, VDS = 0V – – ±100 nA IDSS VDS = 20V, VGS = 0V – – 1 µA ID(on) VDS ≥ 5V, VGS = 4.5V 30 – – A VGS = 4.5V, ID = 6.2A – 17.5 22 VGS = 2.5V, ID = 5.3A – 25 30 VDS = 10V, ID = 6.2A – 26.5 – – 14 20 – 2.2 – – 3 – – 11 30 – 15 50 – 43 100 – 22 50 – 1240 – – 200 – – 120 – Static Gate Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge VDS = 10V, VGS = 4.5V Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Fall Time ID = 6.2A VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V RG = 6Ω tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V f = 1.0 MHz nC ns pF Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage IS — – – 1.7 A VSD IS = 6.2A, VGS = 0V – 0.8 1.2 V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF6968A Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 30 VGS = 4.5V VDS = 10V 25 25 ID -- Drain Current (A) ID -- Drain Source Current (A) 3.5V 3.0V 20 2.0V 2.5V 15 10 20 15 TJ = 125°C 10 --55°C 25°C 5 5 1.5V 0 0 0 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.1 3.0 0.04 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 0.9 0.7 0.5 0.035 0.03 VGS = 2.5V 0.025 0.02 0.015 VGS = 4.5V 0.01 0.3 --50 --25 0 25 50 75 100 125 150 Fig. 5 – On-Resistance vs. Junction Temperature 1.6 RDS(ON) -- On-Resistance (Normalized) VGS = 4.5V ID = 6.2A 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 5 10 15 20 ID -- Drain Current (A) TJ -- Junction Temperature (°C) 125 150 25 30 GF6968A Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.08 5 VDS = 10V ID = 6.2A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 6.2A 0.06 0.04 TJ = 125°C 0.02 TJ = 25°C 0 2 3 4 2 1 5 0 2 4 6 8 10 12 14 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 16 100 1800 VGS = 0V f = 1MHZ VGS = 0V IS -- Source Current (A) 1500 C -- Capacitance (pF) 3 0 1 Ciss 1200 900 600 300 10 --55°C 4 25°C 0.1 0.01 0 TJ = 125°C 1 Coss Crss 0 4 8 12 16 VDS -- Drain-to-Source Voltage (V) 20 0 0.2 0.4 0.6 0.8 1.0 VSD -- Source-to-Drain Voltage (V) 1.2 GF6968A Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 10 – Breakdown Voltage vs. Junction Temperature 33 32 31 30 29 28 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 25 100 10 20 ID -- Drain Current (A) BVDSS -- Breakdown Voltage (V) ID = 250µA 15 10 10 s s 10 10 RDS(ON) Limit ms 0m s 1s 1 10s 0.1 5 0 0µ 1m DC VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100