SEME-LAB D2211UK

TetraFET
D2211UK
METAL GATE RF SILICON FET
MECHANICAL DATA
E
C
D
B
8
1
2
7
R
A
3
6
F
5
4
Q
O
N
M
J
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 7.2V – 1GHz
SINGLE ENDED
L
I
P
H
G
FEATURES
DBC3 Package
PIN 1 Source
PIN 5 Source
• SIMPLIFIED AMPLIFIER DESIGN
PIN 2 Drain
PIN 6 Gate
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
• LOW Crss
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
70W
40V
±20V
16A
–65 to 150°C
200°C
Prelim. 9/00
D2211UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 10mA
VDS = 12.5V
VGS = 0
8
mA
VGS = 20V
VDS = 0
8
mA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 0.8A
GPS
Common Source Power Gain
PO = 10W
Drain Efficiency
VDS = 7.2V
IDSS
IGSS
h
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VSWR Load Mismatch Tolerance
IDQ = 0.8A
f = 1GHz
Ciss
Input Capacitance
VDS = 0
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance
VDS = 12.5V VGS = 0
* Pulse Test:
VGS = –5V f = 1MHz
40
1
1.44
S
7
dB
40
%
20:1
—
96
pF
f = 1MHz
80
pF
f = 1MHz
8
pF
Pulse Duration = 300 ms , Duty Cycle £ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Max. 2.5°C / W
Prelim. 9/00