TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM SOT 171 PIN 1 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN APPLICATIONS PIN 5 SOURCE PIN 6 SOURCE • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 42W 65V ±20V 4A –65 to 150°C 200°C * Per Side Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/96 D1093UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 4 µA VGS(th) Gate Threshold Voltage * ID = 10mA VDS = VGS 7 V gfs Forward Transconductance * VDS = 10V ID = 0.4A GPS Common Source Power Gain PO = 10W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 500MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.8A 65 1 V 0.72 S 13 dB 50 % 20:1 — Ciss Input Capacitance VDS = 0 VGS = –5V f = 1MHz 48 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 24 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 4.2°C / W Prelim. 1/96