SONY 1T363

1T363
Silicon Variable Capacitance Diode
Description
The 1T363 is a variable capacitance diode
designed for electronic tuning of CATV tuner,and
super miniature package allows the tuner
miniaturization.
Features
• Super miniature package
• Low series resistance 0.80 Ω Max. (f=470 MHz)
• Large capacitance ratio 15
Typ. (C1/C28)
• Small leakage current 10 nA Max. (VR=28 V)
• Maximum capacitance deviation
3%
Max.
Applications
Electronic tuning for TV, CATV
M-235
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
30
V
• Peak reverse voltage
VRM
35
V
(RL≥10 kΩ)
• Operating temperature Topr
85
°C
• Storage temperature
Tstg –55 to +150 °C
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Maximum-capacitance
deviation in the
same ranking
(Ta=25 °C)
Symbol
IR
C1
C28
C1/C28
rs
Conditions
VR=28 V
VR=1 V, f=1 MHz
VR=28 V, f=1 MHz
f=1 MHz
CD=14 pF, f=470 MHz
∆C
VR=1 to 28 V, f=1 MHz
Min.
Typ.
34.65
2.361
13.5
38.00
2.515
15.0
0.75
Max.
10
42.35
2.754
Unit
nA
pF
pF
0.80
Ω
3
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E89145B83-TE
1T363
Diode capacitance vs. Reverse voltage
100
CD-Diode capacitance (pF)
Ta=25°C
f=1MHz
10
1
1
10
50
VR-Reverse voltage (V)
Reverse voltage vs. Ambient temperature
VR-Reverse voltage (V)
IR=10µA
50
40
30
–20
0
20
40
60
Ta-Ambient temperature (°C)
—2—
80
1T363
Diode capacitance vs. Ambient temperature
Reverse current vs. Ambient temperature
f=1MHz
1.03
1000
VR=28V
VR=1V
VR=2V
IR-Reverse current (pA)
100
VR=10V
1.01
VR=25V
1.00
10
1
0.99
0.98
–20
0
20
40
60
80
100
–20
Ta-Ambient temperature (°C)
0
20
40
60
80
Ta-Ambient temperature (°C)
Thermal coefficient of diode capacitance
Reverse current vs. Reverse voltage
1000
100
Ta=60°C
IR-Reverse current (pA)
VR=28V
Thermal coefficient (ppm/°C)
C (Ta)
Diode capacitance
C (25°C)
1.02
100
Ta=25°C
10
1
10
1
10
1
30
10
VR-Reverse voltage (V)
VR-Reverse voltage (V)
—3—
100
1T363
Package Outline
Unit : mm
AA AA
M-235
+ 0.2
∗1.25 – 0.1
∗0.9 ± 0.1
+ 0.1
0.3 – 0.05
0.2
2.5 ± 0.2
∗1.7 ± 0.1
2
1
+ 0.1
0.3 – 0.05
0 ± 0.05
+ 0.1
0.11 – 0.06
0° to 10°
NOTE: Dimension “∗” does not include mold protrusion.
SONY CODE
M-235
EIAJ CODE
JEDEC CODE
Marking
PACKAGE WEIGHT
CATHODE MARK
0.1g
2
63
B
1
—4—
Notes
1) B:Lot No.(Year and Month of manufacture)
Year;Last one digit
Month;A,B,C(for Oct. to Dec.)
1 to 9(for Jan.to Sept.)