1T406 Variable Capacitance Diode Description The 1T406 is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Low series resistance: 1.0 Ω Max. (f=470 MHz) • Large capacitance ratio: 15.5 Typ. (C2/C25) • Small leakage current: 10 nA Max. (VR=28 V) • Capacitance deviation in a matching group: within 2 % M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 34 • Operating temperature Topr –20 to +75 • Storage temperature Tstg –65 to +150 V °C °C Applications Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar type diode Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group (Ta=25 °C) Symbol Conditions IR VR C2 C25 C2/C25 rs VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz ∆C C2 to C25, f=1 MHz Min. 34 39.46 2.56 14.5 CD=14 pF, f=470 MHz Typ. Max. Unit 10 47.36 2.99 nA V pF pF 1.0 Ω 2 % 15.5 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E95919-TE 1T406 Diode capacitance vs. Reverse voltage Reverse current vs. Ambient temperature 100 Ta=25°C VR=28V 50 20 IR-Reverse current (pA) C-Diode capacitance (pF) 100 10 5 10 2 1 1 2 5 10 20 VR-Reverse voltage (V) 50 1 –20 Forward voltage vs. Ambient temperature 0 20 40 60 Ta-Ambient temperature (°C) Reverse voltage vs. Ambient temperature 0.80 50 IR=10µA VR-Reverse voltage (V) VF-Forward voltage (V) IF=1mA 0.70 0.60 0.50 –20 80 0 20 40 60 Ta-Ambient temperature (°C) 45 40 35 –20 80 —2— 0 20 40 60 Ta-Ambient temperature (°C) 80 1T406 Diode capacitance vs. Ambient temperature 1.03 C (Ta)/C (25°C )-Diode capacitance VR=1V 1.02 VR=2V 1.01 VR=7V VR=25V VR=15V 1.00 0.99 0.98 –20 0 20 40 60 Ta-Ambient temperature (°C) 80 Reverse current vs. Reverse voltage Temperature coefficient of diode capacitance 100 1000 IR-Reverse current (nA) Ta=60°C 10 Ta=25°C Temperature coefficient (ppm/°C) Ta=80°C 500 200 100 50 1 1 0.1 1 3 10 30 VR-Reverse voltage (V) —3— 2 5 10 VR-Reverse voltage (V) 20 50 1T406 Package Outline Unit : mm 0.2 M A M-290 0.2 ± 0.05 10° MAX 1.7 ± 0.1 1.3 ± 0.1 A 0.8 ± 0.1 c b 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c 0.11 ± 0.005 + 0.05 0.11 – 0.01 b 0.3 ± 0.025 0.05 0.3 –+ 0.02 PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER JEDEC CODE PACKAGE WEIGHT 0.002g SONY CODE M-290 Mark 1 1 : Cathode S6 2 —4— 2 : Anode