TP2502 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS(ON) VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† -20V 2.0Ω -2.4V -2.0A TP2502N8 TP2502ND * Same as SOT-89. † Order Number / Package BVDSS / Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA TP5L❋ Features Where ❋ = 2-week alpha date code ❏ Low threshold — -2.4V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. Low Threshold DMOS Technology ❏ Fast switching speeds These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays Package Option ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches D G D S Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* TO-243AA (SOT-89) -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP2502 Thermal Characteristics Package TO-243AA ID (continuous)* ID (pulsed) -630mA Power Dissipation θjc θja @ TA = 25°C °C/W °C/W 15 78† 1.6W† -3.3A IDR* IDRM -630mA -3.3A * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage -20 VGS(th) Gate Threshold Voltage -1.0 ∆VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) Typ 3.0 ON-State Drain Current -0.4 -0.7 -2.0 -3.3 Static Drain-to-Source ON-State Resistance RDS(ON) Max Conditions V VGS = 0V, ID = -2.0mA -2.4 V VGS = VDS, ID= -1.0mA 4.5 mV/°C VGS = VDS, ID= -1.0mA -100 nA VGS = ± 20V, VDS = 0V -100 µA VGS = 0V, VDS = Max Rating -10 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C A VGS = -5.0V, VDS = -15V VGS = -10V, VDS = -15V 2.0 3.5 1.5 2.0 0.75 1.2 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 70 CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 10 tr Rise Time 11 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 12 VSD Diode Forward Voltage Drop -1.3 trr Reverse Recovery Time 300 0.3 Unit Ω VGS = -5.0V, ID = -250mA VGS = -10V, ID = -1.0A %/°C VGS = -10V, ID = -1.0A Ω Symbol VDS = -15V, ID = -1.0A pF VGS = 0V, VDS = -20V f = 1.0 MHz ns VDD = -20V, ID = -1.0A, RGEN = 25Ω 0.65 125 -2.0 V VGS = 0V, ISD = -1.5A ns VGS = 0V, ISD = -1.5A Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 2 TP2502 Typical Performance Curves Saturation Characteristics -5 -5 -4 -4 VGS = -10V -3 ID (amperes) ID (amperes) Output Characteristics -9V -8V -2 VGS = -10V -3 -9V -8V -2 -7V -7V -6V -1 0 0 -5V -5V -4V -3V -4V -3V 0 -30 -20 -10 -6V -1 -40 0 -2 -4 VDS (volts) -6 -8 -10 VDS (volts) Power Dissipation vs. Ambient Temperature Transconductance vs. Drain Current 1.0 2.0 VDS = -15V TO-243AA 1.6 TA = -55°C 0.6 PD (watts) GFS (siemens) 0.8 TA = 25°C 0.4 1.2 0.8 TA = 150°C 0.2 0.4 0 0 0 -0.4 -0.8 -1.2 -1.6 0 -2.0 25 50 ID (amperes) -10 125 150 Thermal Resistance (normalized) 1.0 TO-243AA(pulsed) ID (amperes) 100 Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 TO-243AA (DC) TA = 25°C -0.1 -0.01 -0.1 75 TA (°C) 0.8 0.6 0.4 TO-243AA TA = 25°C PD = 1.6W 0.2 0 -1.0 -10 0.001 -100 VDS (volts) 0.01 0.1 tp (seconds) 3 1 10 TP2502 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 5 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) 4 1.0 VGS = -10V 3 2 1 0.9 0 -50 0 50 100 150 0 -1 -2 -3 -4 -5 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature -5 2.0 1.4 VDS = -15V RDS (ON) @ -10V, -1A TA = -55°C -3 -2 25°C 150°C 1.2 V(th) @ -1mA 1.2 1.0 0.8 0.8 -1 RDS(ON) (normalized) 1.6 VGS(th) (normalized) ID (amperes) -4 0.4 0.6 0 0 0 -2 -4 -6 -8 -50 -10 0 50 VGS (volts) 100 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 200 f = 1MHz 200 pF -8 VDS = -10V VGS (volts) 150 C (picofarads) 150 100 CISS -6 -4 VDS = -40V COSS 50 80 pF -2 CRSS 0 0 0 -10 -20 -30 0 -40 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. 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