DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-243AA* Die** 250V 6.0Ω 300mA DN3525N8 DN3525NW Product marking for TO-243AA: DN5C❋ Where ❋ = 2-week alpha date code * Same as SOT-89. Products shipped on 2000 piece carrier tape reels. ** Die in wafer form. Features Advanced DMOS Technology ❏ High input impedance These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Normally-on switches ❏ Solid state relays Package Options ❏ Converters ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Telecom D G D S TO-243AA (SOT-89) Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Note: See Package Outline section for dimensions. 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, DN3525 Thermal Characteristics Package ID (continuous)* TO-243AA ID (pulsed) 360mA Power Dissipation @ TA = 25°C 1.6W† 600mA θjc θja °C/W °C/W 15 78† IDR* IDRM 360mA 600mA * ID (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Souce Breakdown Voltage 250 VGS(OFF) Gate-to-Source OFF Voltage -1.5 ∆VGS(OFF) Typ Max Unit Conditions V VGS = -5.0V, ID = 100µA -3.5 V VDS = 15V, ID = 1.0mA Change in VGS(OFF) with Temperature 4.5 mV/°C VDS = 15V, ID = 1.0mA IGSS Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 1.0 µA VGS = -5.0V, VDS = Max Rating 1.0 mA VGS = -5.0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 15V IDSS Saturated Drain-to-Source Current 300 RDS(ON) Static Drain-to-Source ON-State Resistance 6.0 Ω VGS = 0V, ID = 200mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°C VGS = 0V, ID = 200mA GFS Forward Transconductance mg Ω ID = 150mA, VDS=10V CISS Input Capacitance 270 350 COSS Common Source Output Capacitance 20 60 pF VGS = -5.0V, VDS = 25V, f =1.0Mhz CRSS Reverse Transfer Capacitance 5.0 20 td(ON) Turn-ON Delay Time 20 tr Rise Time 25 td(OFF) Turn-OFF Delay Time 25 RGEN = 25Ω, tf Fall Time 40 VGS = 0V to -10V VSD Diode Forward Voltage Drop 1.8 trr Reverse Recovery Time 225 VDD = 25V, ns 800 ID = 150mA, V VGS = -5.0V, ISD = 150mA ns VGS = -5.0V, ISD = 150mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 Typical Performance Curves Output Characteristics Saturation Characteristics 1.4 1.4 VGS=+2V VGS=0V 1.0 ID (Amperes) ID (Amperes) 1.2 VGS=-0.5V 0.8 VGS=-0.8V 0.6 VGS=-1V VGS=-1.5V 0.2 0V 0.8 -0.5V 0.6 -0.8V 0 50 100 150 200 VDS (Volts) 0.0 250 -1V 1.0 4 6 8 TO-243AA 1.6 0.6 PD (Watts) T A =25°C T A =125°C 0.4 0.2 1.2 0.8 0.4 0.0 0.0 0.2 0.4 0.6 ID (Milliamperes) 0.8 0.0 1.0 Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) TO-243AA (Pulsed) TO-243AA (DC) 0.1 0.01 10 VDS (Volts) 100 0 1.0 T A =25°C 1 2 2.0 0.8 1.0 0 -2V 10 Power Dissipation vs. Ambient Temperature T A =-55°C V DS =10V -1.5V VDS (Volts) Transconductance vs. Drain Current GFS (Siemens) 1.0 0.2 VGS=-2V 0.0 ID (Amperes) VGS = +2V 0.4 0.4 0.001 1.2 3 50 75 TA (°C) 100 125 150 Thermal Response Characteristics 0.8 0.6 TO-243AA TA = 25 °C PD = 1.6W 0.4 0.2 0 0.001 1000 25 0.01 0.1 tp (seconds) 1 10 Typical Performance Curves On Resistance vs. Drain Current BVDSV Variation with Temperature 25 1.2 TJ = 25°C VGS = -5V 20 RDS(ON) (ohms) BVDSV (Normalized) ID = 100µA 1.1 1.0 VGS = 0V 15 10 0.9 5 0 50 100 0 0.0 150 0.2 0.4 1.0 1.2 VGS(OFF) and RDS(ON) w/ Temperature Transfer Characteristics 2000 VDS = 10V 1.3 2.4 1.2 2.2 VGS(OFF) (normalized) TA = -55°C 1600 ID (Milliamperes) 0.8 ID (Amperes) TJ (°C) TA = 25°C 1200 TA = 125°C 800 400 1.1 2.0 VGS(OFF) @ 1mA, 15V 1.0 1.8 0.9 1.6 0.8 1.4 0.7 RDS(on) @ 0V, 200mA -3 -2 -1 0 1 1.2 0.6 1.0 0.5 0.8 0.6 0.4 0 -50 2 -25 0 25 VGS (Volts) 50 75 100 125 150 TJ (°C) Gate Drive Dynamic Characteristics Capacitance vs. Drain Source Voltage 3 350 ID = 200mA VGS = -5V 2 300 1 250 VDS=30V VGS (volts) C (picofarads) 0.6 RDS(ON) (normalized) 0.8 -50 200 150 CISS 100 0 -1 -2 -3 50 -4 COSS CRSS -5 0 0 10 20 30 0 40 1000 2000 3000 4000 5000 QG (picocoulombs) VDS (volts) 12/13/010 ©2001 Supertex Inc. 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