TP5335 Low Threshold Product Objective Specification P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number/Package BVDSS / BVDGS RDS(ON) (max) VGS(th) (max) TO-236AB* Wafer -350V 30Ω -2.4V TP5335K1 TP5335NW Product marking for SOT-23 P3S❋ Where *=2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Advanced DMOS Technology Features These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Complementary N- and P-channel devices Applications Package Options Logic level interfaces – ideal for TTL and CMOS Solid state relays Analog switches Drain Power Management Telecom switches Absolute Maximum Ratings Gate Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* Source TO-236AB (SOT-23) top view -55°C to +150°C 300°C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TP5335 Thermal Characteristics Package ID (continuous)* SOT-23 ID (pulsed) -85mA Power Dissipation @ TA = 25°C θjc θja °C/W °C/W 0.36W 200 350 -400mA IDR* IDRM -85mA -400mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter BVDSS VGS(th) ∆V GS(th) IGSS IDSS Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current -350 -1.0 ON-State Drain Current ID(ON) Typ Max Unit Conditions -2.4 4.5 -100 -10 V V mV/°C nA µA VGS = 0V, ID = -100µA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating -1.0 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C -5.0 nA VGS = 0V, VDS = -330V VGS = -4.5V, VDS = -25V -200 mA Static Drain-to-Source ON-State Resistance 75 Ω VGS = -10V, VDS = -25V VGS = -4.5V, ID = -150mA 30 Ω VGS = -10V, ID = -200mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/°C VGS = -10V, ID = -200mA GFS Forward Transconductance CISS Input Capacitance COSS Common Source Output Capacitance 60 CRSS Reverse Transfer Capacitance 22 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 td(OFF) Turn-OFF Delay Time tf Fall Time VSD Diode Forward Voltage Drop trr Reverse Recovery Time RDS(ON) 125 m Ω -400 VDS = -25V, ID = -200mA 110 25 pF VGS = 0V, VDS = -25V f = 1 MHz ns VDD = -25V ID = -150mA RGEN = 25Ω V VGS = 0V, ISD = -200mA ns VGS = 0V, ISD = -200mA 25 -1.8 800 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% PULSE GENERATOR INPUT 90% -10V t(ON) td(ON) Rgen t(OFF) td(OFF) tr tF D.U.T. 0V 90% OUTPUT INPUT 90% RL OUTPUT VDD 10% 10% VDD 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com