VN0104 VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 40V 3.0Ω 2.0A VN0104N3 60V 3.0Ω 2.0A VN0106N3 TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches Package Option ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55°C to +150°C 300°C See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN0104/VN0106 Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) 350mA Power Dissipation @ TC = 25°C 2.0A θjc °C/W θja °C/W 125 170 1.0W IDR* IDRM 350mA 2.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Parameter Min Drain-to-Source Breakdown Voltage BVDSS VN0106 VN0104 VGS(th) Gate Threshold Voltage ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max Unit 60 V VGS = 0V, ID = 1mA 2.4 V VGS = VDS, ID = 1mA -5.5 mV/°C VGS = VDS, ID = 1mA 100 nA VGS = ± 20V, VDS = 0V µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C 40 0.8 -3.8 1 VGS = 0V, VDS = Max Rating 100 ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance Conditions 0.5 1.0 2.0 A 2.5 3.0 5.0 2.5 3.0 0.70 1 ∆RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 55 65 COSS Common Source Output Capacitance 20 25 CRSS Reverse Transfer Capacitance 5 8 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 trr Reverse Recovery Time 400 300 Ω %/°C 450 VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 250mA VGS = 10V, ID = 1A VGS = 10V, ID = 1A Ω Symbol VDS = 25V, ID = 0.5A pF VGS = 0V, VDS = 25V f = 1 MHz m ns VDD = 25V ID = 1A RGEN = 25Ω V VGS = 0V, ISD =1.0A ns VGS = 0V, ISD =1.0A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN0104/VN0106 Typical Performance Curves 2* 12 2 2* 1 2 2 2 2# $)'% 2 2 & ) # 2# $)'% ,- # ) & 2# 1 2 *+ $% "# $% &! 1 /° ° ° ,# $-% "# $% 2 &/0 "# $% . & $°% &' &/0 $#% ! "# $% &' $'(% & 1 ° 2# $)'% 3 &/0 , # 1 3 & 1 ° $ % VN0104/VN0106 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 5.0 1.1 VGS = 5V RDS(ON) (ohms) BVDSS (normalized) 4.0 1.0 VGS = 10V 3.0 2.0 1.0 0.9 0 -50 0 50 100 150 0.5 0 1.5 1.0 2.0 2.5 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 1.9 1.6 2.5 VDS = 25V 25°C 1.5 125°C 1.0 0.5 RDS @ 10V, 1.0A 1.3 1.2 V(th) @ 1mA RDS @ 5V, 0.25A 1.0 1.0 0.8 0.7 0.4 0.6 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 100 150 Tj(°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 100 10 f = 1MHz VDS = 10V 8 75 40V 50 VGS (volts) C (picofarads) RDS(ON) (normalized) VGS(th) (normalized) ID (amperes) 1.6 1.4 TA = -55°C 2.0 CISS 25 COSS 6 80 pF 4 2 CRSS 40 pF 0 0 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 11/12/01 ©2001 Supertex Inc. All rights reserved. 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