CHA2391 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 1 It is supplied in chip form. Main Features Gain (dB) Vg 2 20 5 16 4 12 3 8 2 4 1 0 0 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) On wafer typical measurements. . Main Characteristics Tamb = +25°C Symbol Parameter Fop Operating frequency range NF Noise figure, 36-40GHz G Gain P1dB Min Typ 36 2.5 12 Output power at 1dB gain compression Max Unit 40 GHz 3 dB 15 dB 9 dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA23912240 -28-Aug.-02 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 NF (dB) The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. ■ Broad band performance 36-40GHz ■ 2.5dB noise figure, 36-40GHz ■ 15dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size : 1,67 x 1,03 x 0.1mm 25 50 36-40GHz Very Low Noise Amplifier CHA2391 Electrical Characteristics Tamb = +25°C, Bias Conditions:Vd = +4V Symbol Fop G Parameter Min Operating frequency range 36 Gain (1) 12 Typ Max Unit 40 Ghz 15 dB ∆G Gain flatness (1) ± 0.5 ± 1.0 dB NF Noise figure (1) 2.5 3 dB VSWRin Input VSWR (1) 3.0:1 VSWRout Ouput VSWR (1) 3.0:1 IP3 3rd order intercept point Output power at 1dB gain compression P1dB Vd DC Voltage Id Vd Vg -2 Drain bias current (2) 20 dBm 12 dBm 4 -0.25 45 4.5 +0.4 V mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the indicated parameters should be improved. (2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2. For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the Vg1,2 voltage. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 5.0 V Vg Gate bias voltage -2.0 to +0.4 V Vdg Maximum drain to gate voltage (Vd-Vg) +5.0 V Pin Maximum peak input power overdrive (2) +15 dBm Pin Maximum continuous input power +1 dBm Top Operating temperature range -40 to +85 °C Tsg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA23912240 -28-Aug.-02 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2391 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Bias conditions: Vd = +4V, Id=45mA Freq MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 GHz dB ° dB ° dB ° dB ° 10 12 14 16 18 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 -6,21 -6,33 -6,29 -6,08 -5,84 -5,54 -5,43 -5,30 -5,29 -5,35 -5,54 -5,87 -6,47 -7,39 -8,77 -10,69 -12,44 -12,19 -10,65 -9,85 -9,98 -10,94 -12,52 -13,72 -13,22 -11,65 -10,30 -8,90 -7,51 -6,22 -5,17 -4,24 -3,18 -2,51 -2,04 -1,62 154,25 141,75 127,36 114,92 101,82 86,62 78,44 68,96 58,88 47,97 35,38 21,00 3,87 -16,23 -41,92 -77,04 -127,88 170,79 120,05 82,96 54,87 33,47 20,51 17,24 18,64 9,29 -3,86 -20,55 -38,62 -59,90 -81,47 -102,42 -122,95 -143,29 -161,80 -178,03 -62,67 -57,99 -55,17 -55,88 -53,92 -51,45 -50,53 -49,42 -49,04 -49,34 -47,96 -46,55 -44,77 -43,13 -40,03 -37,67 -35,70 -33,04 -31,11 -29,60 -28,64 -27,69 -26,89 -26,15 -25,53 -25,06 -24,91 -24,74 -24,62 -24,63 -24,78 -25,30 -25,65 -26,29 -27,21 -27,82 -132,87 -156,02 173,41 168,49 135,46 138,48 139,32 132,07 122,68 123,59 126,63 123,65 125,28 124,81 123,61 115,28 105,15 93,43 75,77 58,30 42,10 26,41 9,83 -5,87 -22,03 -38,88 -56,23 -72,65 -88,50 -105,66 -122,84 -139,10 -155,88 -173,89 170,58 157,24 -22,58 -16,83 -12,52 -9,73 -7,54 -6,13 -5,41 -4,82 -4,06 -3,25 -2,19 -0,88 0,38 1,88 3,63 5,50 7,35 9,18 10,75 12,14 13,37 14,27 14,95 15,28 15,46 15,53 15,40 15,17 14,89 14,54 14,05 13,39 12,59 11,55 10,40 9,39 67,85 50,10 23,11 -5,37 -31,47 -55,85 -67,16 -77,06 -85,86 -94,05 -101,60 -110,55 -119,43 -128,85 -138,80 -151,53 -166,04 176,87 158,36 138,69 117,54 95,66 73,24 51,13 29,79 8,33 -12,86 -32,98 -52,97 -73,10 -93,80 -113,54 -133,30 -152,49 -170,65 172,00 -2,93 -3,89 -4,95 -5,86 -7,18 -8,65 -9,65 -10,46 -11,18 -11,33 -11,19 -11,01 -10,17 -9,43 -9,11 -8,70 -8,15 -7,69 -7,59 -7,80 -8,57 -9,80 -11,70 -14,31 -17,89 -23,80 -51,61 -26,28 -20,52 -17,09 -14,60 -12,92 -11,93 -11,14 -10,65 -9,69 -143,42 -164,87 178,26 161,51 144,01 131,69 127,30 125,73 124,83 125,87 124,77 125,49 122,17 117,25 109,58 103,41 94,50 83,88 70,55 56,02 40,66 25,19 9,54 -4,52 -18,79 -30,52 -16,72 118,15 111,87 101,92 89,21 73,66 59,95 47,16 35,08 20,78 Ref. : DSCHA23912240 -28-Aug.-02 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2391 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = +4V Id=45mA 20 Gain, RLoss (dB) 15 10 5 dBS11 dBS21 dBS22 0 -5 -10 -15 -20 20 25 30 35 40 45 50 Frequency (GHz) 20 5 16 4 12 3 8 2 4 1 0 0 30 31 32 33 34 35 36 37 38 39 NF (dB) Gain (dB) Typical Gain and Matching measurements on wafer. 40 Frequency (GHz) Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA23912240 -28-Aug.-02 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2391 Typical Results Tamb = +25°C Vd = 4V ; Id = 45mA 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 -12 -10 -8 -6 -4 -2 0 2 4 Gain ( dB ) Output Power ( dBm ) Freq = 37GHz 16 6 Input Power ( dBm ) 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 -14 -12 -10 -8 -6 -4 -2 0 2 Gain ( dB ) Output Power ( dBm ) Freq = 39.5GHz 16 4 Input Power ( dBm ) Typical Output Power and Gain measurements in test jig (included losses of the jig) Ref. : DSCHA23912240 -28-Aug.-02 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2391 Typical Chip Assembly To Vd DC Drain supply feed 47pF 50 25 IN OUT 47pF 47pF To Vg1 DC Gate supply feed To Vg2 DC Gate supply feed Note : Supply feed should be capacitively bypassed. Mechanical data 1670 +/-35 1290 445 445 1030 +/-35 990 345 645 Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA23912240 -28-Aug.-02 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2391 Chip Biasing This chip is a two stage amplifier, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd 50 25 IN OUT Vds1 Vg 1 Vds2 Vg 2 The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). We propose two standard biasing : Low Noise and low consumption : Vd = 3.5V and Id = 30mA. Low Noise and high output power : Vd = 4.0V and Id = 45mA.( A separate access to the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a typical current of 30mA for the output stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain 45 mA of current through the amplifier. Ref. : DSCHA23912240 -28-Aug.-02 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2391 Ordering Information Chip form : CHA2391-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA23912240 -28-Aug.-02 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice