CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form or in an hermetic leadless ceramic package. Main Features Pin Out ■ Broad band performance 7-13GHz ■ 2.0dB noise figure, 8-13GHz ■ 19dB gain ■ Low DC power consumption, 40mA ■ 18dBm 3rd order intercept point ■ Chip size : 1,52 x 1,27 x 0.1mm 1 - NC 2 - NC 3 - RF output 4 - NC 5 - Vdd 6 - RF input Main Characteristics Tamb = +25°C, package form Symbol Parameter NF Noise figure, 7-8GHz Noise figure, 8-13GHz G Gain ∆G Min 16 Gain flatness Typ Max Unit 2.5 2.0 3.0 2.5 dB 19 dB ± 2.0 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20630096 -05-Apr-00 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7-13GHz Low Noise Amplifier CHA2063a Electrical Characteristics Package form Tamb = +25°C, Vd = +4V Symbol Fop G ∆G Test Condi tions Parameter Operating frequency range 7 Gain 16 Gain flatness NF Min Noise figure 7-8 Ghz Noise figure 8-13 GHz Typ Max Unit 13 Ghz 19 dB ±2 dB 2.5 3.0 2.0 2.5 VSWRin Input VSWR 2.0:1 2.5:1 VSWRout Ouput VSWR 2.0:1 2.5:1 P1dB IP3 Id dB Output power at 1dB gain compression F=10 GHz 8 dBm 3rd order intercept point 18 dBm Drain bias current 40 60 mA Absolute Maximum Ratings Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage (3) 5.0 V Pin Maximum peak input power overdrive (2) +15 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3)See chip biasing option page 9/10 Ref. : DSCHA20630096 -05-Apr-00 2/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Electrical Characteristics Chip form Tamb = +25°C, Vd = +4V Symbol Fop Test Condi tions Parameter Operating frequency range G (1) Gain Min Typ 7 17 Max Unit 12 Ghz 19 dB dB ∆G Gain flatness ±2 NF Noise figure 7-8 Ghz 2.5 3.0 Noise figure 8-12 GHz 2.0 2.5 VSWRin Input VSWR (1) 2.0:1 3.0:1 VSWRout Ouput VSWR (1) 2.0:1 3.0:1 P1dB IP3 Id dB Output power at 1dB gain compression F=10 GHz 8 dBm 3rd order intercept point 18 dBm Drain bias current 40 80 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and output bonding wires, the indicated parameter values are close to those of the CHA2063a packaged product. Ref. : DSCHA20630096 -05-Apr-00 3/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Typical on Wafer Scattering Parameters Tamb = +25°C Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected ) (see chip biasing option page 9/10) Freq S11 S11 S12 S12 S21 S21 S22 S22 GHz dB ° dB ° dB ° dB ° 5.00 -0.86 -91.7 --65.97 -63.6 6.08 -175.1 -7.99 -131.3 5.50 -1.66 -109.6 -57.28 -77.7 11.49 152.4 -9.91 -139.3 6.00 -3.56 -131.8 -50.70 -105.2 16.03 113.4 -11.62 -143.8 6.50 -7.75 -153.2 -46.25 -137.6 18.99 69.3 -12.74 -150.7 7.00 -14.77 -159.2 -43.76 -167.7 20.39 27.7 -14.62 -164.1 7.50 -21.16 -116.9 -42.21 166.7 20.79 -9.1 -18.09 -179.8 8.00 -19.40 -79.1 -41.19 145.2 20.89 -40.9 -24.49 160.0 8.50 -16.83 -61.4 -40.39 127.8 20.76 -69.6 -34.60 38.5 9.00 -14.68 -53.7 -39.78 111.7 20.45 -95.4 -23.38 -9.1 9.50 -12.52 -52.6 -39.31 96.9 20.16 -119.5 -18.53 -23.3 10.00 -10.61 -57.4 -38.85 83.9 19.79 -141.8 -15.76 -31.8 10.50 -9.31 -65.5 -38.51 72.6 19.36 -162.9 -13.58 -40.2 11.00 -8.38 -74.2 -38.14 62.0 18.85 176.6 -11.92 -48.5 11.50 -7.71 -83.7 -37.74 52.8 18.41 157.3 -10.67 -57.1 12.00 -7.26 -93.4 -37.17 44.1 17.94 138.1 -9.74 -65.8 12.50 -6.86 -103.8 -36.62 35.4 17.40 119.5 -9.01 -73.5 13.00 -6.57 -114.6 -35.91 27.3 16.84 101.6 -8.54 -81.7 13.50 -6.34 -126.4 -35.11 18.2 16.26 83.8 -8.21 -88.8 14.00 -6.18 -139.4 -34.27 8.5 15.65 66.5 -8.05 -95.7 14.50 -6.16 -153.5 -33.41 -1.9 15.01 49.1 -8.03 -101.7 15.00 -6.25 -169.0 -32.67 -13.3 14.35 31.7 -8.02 -106.9 Ref. : DSCHA20630096 -05-Apr-00 4/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Typical Results in package Typical Response (In package Sij ) : Tamb = +25°C Vd = 4.0V ; ; Id = 40mA Gain slope : -0.015dB/°C Id slope : -0.025mA/°C 25 5 -40 °C 20 4 3 25 °C 10 2 5 1 0 NF (dB) Gain (dB) +80 °C 15 0 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) Typical Gain and Noise Figure measurements in package 0 -5 S11, S22 (dB) -10 S22 -15 +80 °C -20 -25 _40 °C -30 S11 _40 °C -35 +80 °C -40 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) Typical Matching measurements in package. Ref. : DSCHA20630096 -05-Apr-00 5/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Typical Output Power measurements in package Tamb = +25°C Vd = 4.0V ; Id = 40mA F=10 GHz 20 10 19 8 Gain 18 6 4 Pout 16 2 15 0 14 -2 13 -4 12 Pout (dBm) Gain (dB) 17 -6 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 Pin (dBm) Ref. : DSCHA20630096 -05-Apr-00 6/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Typical Results in chip Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected ) (see chip biasing option page 9/10) 25 10 20 8 S21 6 10 4 NF (dB) S21 (dB) 15 NF 5 2 0 0 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) Typical Gain and Noise Figure measurements on wafer. 0 -5 S11, S22 (dB) -10 S11 -15 -20 S22 -25 -30 -35 -40 5 6 7 8 9 10 11 12 13 14 15 Frequency (dB) Typical Matching measurements on wafer. Ref. : DSCHA20630096 -05-Apr-00 7/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Chip schematic and Pad Identification 1520µm G1 GND G2 Vd 2k 2k 55 55 1k 1k 1270µm RFout RFin 21 A 21 B 31 C 21 GND GND D 21 E Pad size 100x100µm, chip thickness 100µm Dimensions : 1520 x 1270µm ± 35µm Ref. : DSCHA20630096 -05-Apr-00 8/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Typical Chip Assembly Vd C = 100pF IN OUT Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. G1 Vd G2 55 55 2k 2k 21 21 1k A B 31 21 1k C E 21 D The two requirements are : N°1 : Not exceed Vds = 3.5Volt (internal Drain to Source voltage). N°2 : Biased in such a way to limit Vgs positive value (internal Gate to Source voltage). We propose two standard biasing : Low Noise and low consumption : Vd = 4V and B & D grounded. All the other pads non connected ( NC ). Idd = 40mA & Pout-1dB = +8dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+2.5V ; G2=+2.5V). Low Noise and high output power : Vd = 5V and B & E grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = +13dBm Typical. ( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+2.5V ; G2=+1.0V). Ref. : DSCHA20630096 -05-Apr-00 9/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7-13GHz Low Noise Amplifier CHA2063a Package Outline 1.75 max 0.68 3.50 2.89 5 4 1.72 Typ. u.m.s. 6 8.38 I CHA2063a 4.19 3 O 0.25 Typ. AA/SS YXXXX 1 2 Pin 1 index Date code Manufacture code Unit : mm General tolerance : ±0.13 Ordering Information Chip form : Package form : CHA2063a99F/00 CHA2063aMAF/23 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20630096 -05-Apr-00 10/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice