SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX1053A ISSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 21mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 78mat 4.5A C E C Partmarking Detail - B 053 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 150 V VCEO 75 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ** ICM 10 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1053A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO 150 250 V IC=100A Collector-Emitter Breakdown Voltage VCES 150 250 V IC=100A Collector-Emitter Breakdown Voltage VCEO 75 100 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 150 250 V IC=100A, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5 8.8 V IE=100A Collector Cut-Off Current ICBO 0.9 10 nA VCB=120V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 1.5 10 nA VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 21 55 150 160 350 30 75 200 210 440 mV mV mV mV mV IC=0.2A, IB=20mA* IC=0.5A, IB=20mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=4.5A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 900 1000 mV IC=3A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 825 950 mV IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE Switching Times ton 162 ns IC=2A, IB1=IB2=20mA, VCC=50V toff 900 ns IC=2A, IB1=IB2=20mA, VCC=50V Transition Frequency fT 140 MHz IC=50mA, VCE=10V f=100MHz Output Capacitance Cobo 21 pF VCB=10V, f=1MHz 270 300 300 40 TYP. 440 450 450 60 20 MAX. UNIT IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4.5A, VCE=2V* IC=10A, VCE=2V* 1200 30 CONDITIONS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX1053A TYPICAL CHARACTERISTICS 0.8 0.8 IC/IB=30 0.6 VCE(sat) - (V) VCE(sat) - (V) +25°C IC/IB=10 IC/IB=30 IC/IB=100 0.4 0.2 0 1m 10m 100m 1 10 0.6 -55°C +25°C +100°C +150°C 0.4 0.2 0 1m 100 VCE(sat) v IC 1.6 VCE=2V +100°C +25°C -55°C 400 VBE(sat) - (V) hFE - Typical Gain 600 200 0 1m 10m 100m 1 10 IC - Collector Current (A) VCE=2V VBE(on) - (V) 1.2 0.8 0 1m -55°C +25°C +100°C +150°C 10m 100m IC - Collector 1 10 Current (A) VBE(on) v IC 100m 1 10 100 100 IC/IB=30 1.2 0.8 -55°C +25°C +100°C +150°C 0.4 0 1m 100 IC - Collector Current (A) hFE v IC 0.4 10m IC - Collector Current (A) VCE(sat) v IC IC - Collector Current (A) 10m 100m 1 10 IC - Collector Current (A) VBE(sat) v IC 100 10 1 100m 10m 100m VCE DC 1s 100ms 10ms 1ms 100us 1 10 100 - Collector Emitter Voltage (V) Safe Operating Area