DIODES FCX619

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
FCX619
ISSUE 6 - JANUARY 2003
FEATURES
*
2W POWER DISSIPATION
*
*
*
*
*
6A PEAK PULSE CURRENT
EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps
EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
RCE(sat) 87mΩ
Ω at 2.75A
COMPLIMENTARY TYPE PARTMARKING DETAIL -
C
E
C
B
FCX720
619
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V CBO
50
V
Collector-Emitter Voltage
V CEO
50
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
6
A
Continuous Collector Current †
IC
3.0
A
Base Current
IB
500
mA
Power Dissipation at T amb=25°C
P tot
1.5†
2‡
W
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
recommended Ptot calculated using FR4 measuring 25x25x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
†
‡
Refer to the handling instructions for soldering surface mount components.
FCX619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
50
190
MAX.
V
I C=100µA
Collector-Emitter
Breakdown Voltage
V (BR)CEO
50
65
V
I C=10mA*
Emitter-Base
Breakdown Voltage
V (BR)EBO
5
8.3
V
I E=100µA
Collector Cut-Off
Current
I CBO
100
nA
V CB=40V
Emitter Cut-Off Current I EBO
100
nA
V EB=4V
Collector Emitter
Cut-Off Current
I CES
100
nA
V CES =40V
Collector-Emitter
Saturation Voltage
V CE(SAT)
13
150
190
240
25
220
260
320
mV
mV
mV
mV
I C=0.1A, I B=10mA*
I C=1A, I B=10mA*
I C=2A, I B=50mA*
I C=2.75A,I B=100mA*
Base-Emitter
Saturation Voltage
V BE(SAT)
0.97
1.1
V
I C=2.75A,
I B=100mA*
Base-Emitter Turn-On
Voltage
V BE(ON)
0.89
1.0
V
I C =2.75A, V CE=2V*
Static Forward Current
Transfer Ratio
h FE
200
300
200
100
400
450
400
200
30
Transition
Frequency
fT
100
165
Output Capacitance
C OBO
12
Turn-On Time
t (ON)
170
Turn-Off Time
t (OFF)
750
ns
I C=10mA, V CE=2V*
I C=200mA, V CE=2V*
I C=1A, V CE=2V*
I C=2A, V CE=2V*
I C=6A, V CE=2V*
20
MHz
I C=50mA, V CE=10V
f=100MHz
pF
V CB=10V, f=1MHz
ns
V CC=10V, I C=1A
I B1=-I B2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FCX619