SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 MARCH 1995 PARTMARKING DETAIL COMPLEMENTARY TYPE FMMTA20 1C FMMTA20R 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 4 V Continuous Collector Current IC 100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO Static Forward Current Transfer Ratio hFE Collector-Emitter Saturation Voltage VCE(sat) Transition Frequency fT Output Capacitance Cobo MAX. UNIT CONDITIONS. 40 V IC=1mA, IE=0 4 V IE=100mA, IC=0 µA VCB=30V, IE=0 0.1 40 400 0.25 125 4 IC=5mA, VCE=10V* V IC=10mA,IB=1mA MHz IC=5mA, VCE=10V f=100MHz pF VCB=10V, f=140kHz, IE=0 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device