SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTORS ZUMTQ31A ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL – T11 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 3 V Continuous Collector Current IC 100 mA Base Current IB 50 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. 30 V I C=1.0µA, I E =0 V (BR)CEO 15 V I C=3mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO 3 V I E=10µA, I C=0 Collector Cut-Off Current I CBO 0.01 µA V CB=15V, I E=0 Collector-Emitter Saturation Voltage V CE(sat) 0.4 V I C=10mA, I B=1mA Base-Emitter Saturation Voltage V BE(sat) 1.0 V I C=10mA, I B=1mA Static Forward Current Transfer Ratio h FE 100 Transition Frequency fT 600 Collector-Base Capacitance C obo Input Capacitance Noise Figure I C=3mA, V CE=1V MHz I C=4mA, V CE=10V f=100MHz 1.7 pF V CB=10V, f=1MHz C ibo 2.0 pF V CB=0.5V, f=1MHz N 6.0 dB I C=1mA, V CE=6V R s=400Ω, f=60MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device