PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr ts tf µs µs 250 IB1=IB2=IC/10 VCE=10V 1.6 IC/IB=10 1.4 200 3 Switching time VCE(sat) - (mV) 4 150 100 1.2 0.001 0.01 0.1 C B ts 1.0 td 0.6 1 tf 0 0.01 1 IC - Collector Current (Amps) ts td tr 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 100 80 1.0 VBE(sat) - (Volts) hFE - Normalised Gain (%) ABSOLUTE MAXIMUM RATINGS. tr 0.4 VCE=5V 60 40 0.001 0.01 0.1 0.0001 0.001 0.01 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 0.1 1 Single Pulse Test at Tamb=25°C 1.0 IC - Collector Current (Amps) 1.2 VBE - (Volts) 0.8 0.6 0.4 0.0001 0.001 0.01 0.1 0.1 D.C. 1s 100ms 10ms 1.0ms 300µs 0.01 ZTX756 1 ZTX757 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-266 ZTX757 UNIT -200 -300 V Collector-Emitter Voltage VCEO -200 -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER IC - Collector Current (Amps) VCE=5V ZTX756 VCBO SYMBOL 0.6 1 1.0 SYMBOL Collector-Base Voltage -0.5 A 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 0.4 0.0001 PARAMETER IC/IB=10 20 0 E E-Line TO92 Compatible tf 0.8 2 0.2 0.0001 ZTX756 ZTX757 1000 ZTX756 ZTX757 MIN. MAX. MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -200 -300 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -200 -300 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 -100 nA nA VCB=-160V, IE=0 VCB=-200V, IE=0 Emitter Cut-Off Current IEBO -100 -100 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.5 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.0 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 -1.0 V IC=-100mA, VCE=-5V* Static Forward Current Transfer Ratio hFE 50 40 50 40 Transition Frequency fT 30 30 Output Capacitance Cobo 20 3-265 IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX756 ZTX757 ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr ts tf µs µs 250 IB1=IB2=IC/10 VCE=10V 1.6 IC/IB=10 1.4 200 3 Switching time VCE(sat) - (mV) 4 150 100 1.2 0.001 0.01 0.1 C B ts 1.0 td 0.6 1 tf 0 0.01 1 IC - Collector Current (Amps) ts td tr 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.2 100 80 1.0 VBE(sat) - (Volts) hFE - Normalised Gain (%) ABSOLUTE MAXIMUM RATINGS. tr 0.4 VCE=5V 60 40 0.001 0.01 0.1 0.0001 0.001 0.01 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 0.1 1 Single Pulse Test at Tamb=25°C 1.0 IC - Collector Current (Amps) 1.2 VBE - (Volts) 0.8 0.6 0.4 0.0001 0.001 0.01 0.1 0.1 D.C. 1s 100ms 10ms 1.0ms 300µs 0.01 ZTX756 1 ZTX757 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-266 ZTX757 UNIT -200 -300 V Collector-Emitter Voltage VCEO -200 -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER IC - Collector Current (Amps) VCE=5V ZTX756 VCBO SYMBOL 0.6 1 1.0 SYMBOL Collector-Base Voltage -0.5 A 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.8 0.4 0.0001 PARAMETER IC/IB=10 20 0 E E-Line TO92 Compatible tf 0.8 2 0.2 0.0001 ZTX756 ZTX757 1000 ZTX756 ZTX757 MIN. MAX. MIN. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -200 -300 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -200 -300 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 -100 nA nA VCB=-160V, IE=0 VCB=-200V, IE=0 Emitter Cut-Off Current IEBO -100 -100 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.5 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.0 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 -1.0 V IC=-100mA, VCE=-5V* Static Forward Current Transfer Ratio hFE 50 40 50 40 Transition Frequency fT 30 30 Output Capacitance Cobo 20 3-265 IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz