SEMICONDUCTOR KRC860U~KRC864U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 2 5 3 4 A C A1 Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. D C 5 H 6 B1 C MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G EQUIVALENT CIRCUIT (TOP VIEW) EQUIVALENT CIRCUIT 4 T G R1 B DIM A A1 B C Simplify Circuit Design. 1. 2. 3. 4. 5. 6. Q1 Q2 E 1 2 Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR 3 US6 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector Power Dissipation Collector-Emitter Voltage VCEO 50 V Junction Temperature Emitter-Base Voltage VEBO 5 V Storage Temperature Range IC Collector Current 100 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC CHARACTERISTIC SYMBOL RATING UNIT PC * 200 mW Tj 150 Tstg -55 150 * Total Rating. mA ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz - 4.7 - - 10 - VCE(sat) Collector-Emitter Saturation Voltage fT * Transition Frequency KRC860U KRC861U R1 KRC862U Input Resistor - 100 - KRC863U - 22 - KRC864U - 47 - Note : * Characteristic of Transistor Only. k Type Name Marking 6 5 4 1 2 3 MARK SPEC TYPE KRC860U KRC861U KRC862U KRC863U KRC864U MARK NK NM NN NO NP 2002. 7. 10 Revision No : 3 1/4 KRC860U~KRC864U ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Rise Time SYMBOL MIN. TYP. MAX. KRC860U - 0.025 - KRC861U - 0.03 - - 0.3 - KRC863U - 0.06 - KRC864U - 0.11 - KRC860U - 3.0 - VO=5V - 2.0 - VIN=5V - 6.0 - RL=1k - 4.0 - KRC864U - 5.0 - KRC860U - 0.2 - KRC861U - 0.12 - - 2.0 - KRC863U - 0.9 - KRC864U - 1.4 - KRC862U tr KRC861U Switching Time Storage Time KRC862U tstg KRC863U Fall Time 2002. 7. 10 KRC862U Revision No : 3 TEST CONDITION tf UNIT S 2/4 KRC860U~KRC864U V CE(sat) - I C h FE - I C KRC860U COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 1 3 10 30 100 IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 V CE =5V 0.3 1 3 10 30 100 2 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE Ta=100 C Ta=25 C Ta=-25 C 50 30 V CE =5V 0.3 1 3 3 10 30 100 VCE(sat) - I C 1k 100 1 COLLECTOR CURRENT I C (mA) KRC862U 500 300 100 IC /I B =20 1 h FE - I C 10 30 COLLECTOR CURRENT I C (mA) 2002. 7. 10 30 KRC861U COLLECTOR CURRENT I C (mA) 0.1 10 VCE(sat) - I C 500 300 10 3 h FE - I C 1k 2k 1 COLLECTOR CURRENT I C (mA) KRC861U 10 0.1 KRC860U COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 0.3 2 Revision No : 3 100 2 KRC862U I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-25 C 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 3/4 KRC860U~KRC864U VCE(sat) - I C h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k KRC863U 1k 500 300 Ta=100 C 100 Ta=25 C Ta=-25 C 50 30 V CE =5V 10 0.1 0.3 1 3 10 30 100 2 KRC863U I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-25 C 0.1 COLLECTOR CURRENT I C (mA) 0.3 COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 1k Ta=100 C Ta=25 C Ta=-25 C 100 50 30 10 VCE =5V 0.1 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 2002. 7. 10 10 30 100 V CE(sat) - I C KRC864U 500 300 3 COLLECTOR CURRENT I C (mA) h FE - I C 2k 1 Revision No : 3 100 2 KRC864U I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 4/4