DCCOM 2N7000

DC COMPONENTS CO., LTD.
2N7000
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
Description
Designed for low voltage and low current applications
such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Source
2 = Gate
3 = Drain
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Symbol
Rating
Unit
Drain-Source Voltage
Characteristic
VDSS
60
V
Drain-Gate Voltage (RGS=1MΩ)
VDGR
60
V
Gate-Source Voltage (Continuous)
VGS
o
Drain Current (Continuous, TC=25 C)
Drain Current (Pulsed)
20
ID
(1)
200
mA
IDM
500
mA
PD
350
2.8
mW
o
mW/ C
Operating Junction Temperature
TJ
-55 to+150
Maximum Lead Temperature, for
10 Seconds Solding Purpose
TSTG
-55 to+150
TL
300
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
V
Total Power Dissipation
o
Derate above 25 C
Storage Temperature
.500
Min
(12.70)
.100
Typ
(2.54)
3 2 1
o
.022(0.56)
.014(0.36)
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
o
C
o
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
60
-
-
V
Test Conditions
ID=10µA, VGS=0
Zero Gate Voltage Drain Current
IDSS
-
-
1
µA
VDS=48V, VGS=0
Gate-Sourse Forward Leakage Current
IGSSF
-
-
10
nA
VGSF=15V, VDS=0
Gate-Sourse Reverse Leakage Current
(1)
Gate Threshold Voltage
On-State Drain Current
(1)
(1)
Static Drain-Source On-State Voltage
(1)
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
IGSSR
-
-
-10
nA
VGSR=-15V, VDS=0
VGS(th)
0.8
-
3
V
VDS=3V, ID=1mA
ID(on)
75
-
-
mA
VDS=4.5V, VDS=10V
VDS(on)1
-
-
0.45
V
ID=75mA, VGS=4.5V
VDS(on)2
-
-
2.5
V
ID=500mA, VGS=10V
RDS(on)1
-
-
6
Ω
ID=75mA, VGS=4.5V
RDS(on)2
-
-
5
Ω
ID=500mA, VGS=10V
gFS
100
-
-
µS
VDS=10V, ID=200mA
Input Capacitance
Ciss
-
-
60
pF
Output Capacitance
Coss
-
-
25
pF
Reverse Transfer Capacitance
Crss
-
-
5
pF
Thermal Resistance, Junction to Ambient
RθJA
-
-
357
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
o
C/W
VDS=25V, VGS=0, f=1MHZ
-