DC COMPONENTS CO., LTD. IRF640 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS(ON) = 0.18 Ohm ID = 18 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements TO-220AB Description Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. .151 Typ (3.83) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .055(1.39) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) Pinning 1 = Gate 2 = Drain 3 = Source .350(8.90) .330(8.38) 1 Symbol 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) D .640 Typ (16.25) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) G Dimensions in inches and (millimeters) S N-Channel MOSFET Absolute Maximum Ratings Characteristic Drain Current @ TC=25oC Continuous Pulsed Symbol Rating Unit ID 18 72 A IDM Gate-to-Source Voltage VGS 20 Total Power Dissipation @ TC=25oC Derate above 25oC PD 125 1.0 Operating Junction Temperature TJ -55 to +150 Storage Temperature Maximum Lead Temperature for Soldering Purposes, 1/8" from Case for 10 Seconds TSTG -55 to +150 TL 260 V W W/oC o o o C C C IRF640 N-Channel Power MOSFET Electrical Characteristics (TJ = 25oC unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Symbol Min Typ Max Unit V(BR)DSS 200 - - V Test Conditions VGS=0V, ID=250µA - - 0.2 - - 1.0 IGSSF - - 100 Gate-Source Reverse Leakage Current IGSSR - - -100 Gate Threshold Voltage VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance RDS(on) - - 0.18 Ω VGS=10V, ID=10A(Note) gFS 6.0 - - S VDS 3.2V, ID=10A(Note) Input Capacitance Ciss - - 1600 Output Capacitance Coss - - 750 pF VDS=25V, VGS=0V, f=1.0MHz Reverse Transfer Capacitance Crss - - 300 Turn-On Delay Time td(on) - - 30 tr - - 60 td(off) - - 80 ns VDD=30V, ID=10A, VGS=10V, RG=4.7Ω(Note) nC VDS=160V, ID=18A, VGS=10V(Note) Drain-Source Leakage Current IDSS Gate-Source Forward Leakage Current Forward Transconductance Rise Time Turn-Off Delay Time Fall Time Total Gate Charge tf - - 60 Qg - 36 63 mA nA VDS=200V, VGS=0V VDS=160V, VGS=0V, TJ=125oC VGSF=20V, VDS=0V VGSR=-20V, VDS=0V VDS=VGS, ID=250µA Gate-Source Charge Qgs - 16 - Gate-Drain Charge Qgd - 26 - Internal Drain Inductance LD - 4.5 - nH Measured from the drain lead 0.25" from package to center of die Internal Source Inductance LS - 7.5 - nH Measured from the source lead 0.25" from package to source bond pad Diode Forward Voltage VSD - 1.8 2.0 V Reverse Recovery Time trr - 450 - ns Forward Turn-On Time Thermal Resistance ton Intrinsic turn-on time is neglegible and dominated by inductance LS+LD Junction to Case RθJC - - 1.0 Junction to Ambient RθJA - - 62.5 Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2% DC COMPONENTS CO., LTD. R IS=18A, VGS=0V(Note) IF=18A, di/dt=100A/µs(Note) o C/W -