2SK3987-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 500 500 3.6 ±14.4 ±30 3.6 EAS 227.9 EAR dV DS /dt dV/dt PD Tch Tstg 6.0 20 5 60 2.02 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V Note *1 mJ Note *2 mJ kV/μs kV/μs W W °C °C Note *3 VDS < = 500V Note *4 Equivalent circuit schematic Drain(D) Tc=25°C Ta=25°C Gate(G) Note *1 Tch< =150°C Note *2 Starting Tch=25°C, IAS=1.5A, L=186mH, VCC=50V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. < Note *4 IF < = -ID, -di/dt=50A/μs, Vcc < = BVDSS, Tch = 150°C Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Min. Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=1.8A VGS=10V Typ. 500 3.0 Tch=25°C Tch=125°C ID=1.8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=1.8A VGS=10V 1.7 RGS=10 Ω V CC =250V ID=3.6A VGS=10V IF=3.6A VGS=0V Tch=25°C IF=3.6A VGS=0V -di/dt=100A/μs Tch=25°C 1.84 3.4 330 50 2.5 11 5.0 23 6.0 13 5.5 2.5 1.00 0.5 2.3 Max. 5.0 25 250 100 2.3 500 75 5.0 18 7.5 35 9.0 20 8.5 3.8 1.50 Units V V μA nA Ω S pF ns nC V μs μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.083 62.0 Units °C/W °C/W 1 2SK3987-01L,S,SJ (500V/3.6A/2.3Ω) FUJI POWER MOSFET Characteristics 2 2SK3987-01L,S,SJ (500V/3.6A/2.3Ω) FUJI POWER MOSFET 3 2SK3987-01L,S,SJ FUJI POWER MOSFET (500V/3.6A/2.3Ω) Outline Drawings [mm] T-pack(L) http://www.fujielectric.co.jp/fdt/scd/ T-pack(S) T-pack(SJ) [D2-pack] 4