CMT18N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ! Silicon Gate for Fast Switching Speeds speed power switching applications such as switching ! Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature regulators, converters, solenoid and relay drivers. ! Rugged – SOA is Power Dissipation Limited ! Source-to-Drain Characterized for Use With Inductive Loads PIN CONFIGURATION SYMBOL TO-220 D SOURCE DRAIN GATE Front View G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT18N20N220 TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit A ID 18 IDM 72 VGS ±20 VGSM ±40 V PD 125 W 1.00 W/℃ TJ, TSTG -55 to 150 ℃ EAS 224 mJ θJC 1.00 ℃/W θJA 62.5 TL 260 Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ V (VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds ℃ (1) Pulse Width and frequency is limited by TJ(max) and thermal response 2001/11/01 Draft Champion Microelectronic Corporation Page 1 CMT18N20 POWER FIELD EFFECT TRANSISTOR ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT18N20 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Symbol Min V(BR)DSS 200 Typ Max Units V mA Drain-Source Leakage Current (VDS = Rated VDSS, VGS = 0 V) (VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * RDS(on) 0.18 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 5.0 A) VDS(on) 6.0 V 0.025 1.0 Forward Transconductance (VDS = 50 V, ID = 10 A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (VDD = 30 V, ID = 10 A, VGS = 10 V, RG = 4.7Ω) * Rise Time Turn-Off Delay Time Fall Time Total Gate Charge gFS 2.0 6.8 mhos Ciss 1600 Coss 750 pF pF Crss 300 pF td(on) 30 tr 60 ns ns td(off) 80 ns tf 60 ns 63 Qgs 16 nC nC Qgd 26 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 0.8Rated VDSS, ID = Rated ID, VGS = 10 V)* Qg 36 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = Rated ID, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 450 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2001/11/01 Draft Champion Microelectronic Corporation Page 2 CMT18N20 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2001/11/01 Draft Champion Microelectronic Corporation Page 3 CMT18N20 POWER FIELD EFFECT TRANSISTOR 2001/11/01 Draft Champion Microelectronic Corporation Page 4 CMT18N20 POWER FIELD EFFECT TRANSISTOR 2001/11/01 Draft Champion Microelectronic Corporation Page 5 CMT18N20 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e e1 b A1 c L1 φ Side View Front View 2001/11/01 Draft Champion Microelectronic Corporation Page 6 CMT18N20 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2001/11/01 Draft T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 7 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. 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