ISC 2N6470

Inchange Semiconductor
Product Specification
2N6470 2N6471 2N6472
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・Excellent safe operating area
・High gain at high current
APPLICATIONS
・General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6470
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6471
Open emitter
70
2N6472
90
2N6470
40
2N6471
Emitter-base voltage
UNIT
50
Open base
2N6472
VEBO
VALUE
60
V
V
80
Open collector
5
V
IC
Collector current
15
A
IB
Base current
5
A
PT
Total power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.4
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6470 2N6471 2N6472
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6470
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6471
MIN
TYP.
MAX
UNIT
40
IC=0.2A ;IB=0
V
60
80
2N6472
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A; IB=3A
3.5
V
VBE
Base-emitter on voltage
IC=15A ; VCE=4V
3.5
V
ICEO
Collector cut-off current
VCE=1/2Rated VCEO; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE=-1.5V
TC=150℃
0.2
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=4V
20
hFE-2
DC current gain
IC=15A ; VCE=4V
5
Transition frequency
IC=0.5A ; VCE=10V
4
fT
2
150
Inchange Semiconductor
Product Specification
2N6470 2N6471 2N6472
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3