isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA483 DESCRIPTION ·High Collector Current:: IC= -1.5A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 APPLICATIONS ·Power amplifier applications ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous 1.5 A PC Total Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor 2SA483 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA ; IE= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.8 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -10V -1.8 V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE DC Current Gain IC= -0.1A ; VCE= -10V Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -10V 10 MHz Output Capacitance VCB= -10V; ftest= 1MHz 50 pF fT COB CONDITIONS O Y 30-80 70-140 120-240 isc Website：www.iscsemi.cn TYP. B hFE-1 Classifications R MIN 2 30 MAX UNIT 240