ISC 2SC1080

Inchange Semiconductor
Product Specification
2SC1079 2SC1080
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type 2SA679/680
・High power dissipation
APPLICATIONS
・For audio power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2SC1079
VCBO
Collector-base voltage
120
Open base
2SC1080
VEBO
Emitter-base voltage
V
100
2SC1079
Collector-emitter voltage
UNIT
120
Open emitter
2SC1080
VCEO
VALUE
V
100
Open collector
5
V
IC
Collector current
12
A
IE
Emitter current
-12
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1079 2SC1080
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC1079
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
120
IC=0.1A ;IB=0
2SC1080
V(BR)EBO
MIN
V
100
Emitter-base breakdown voltage
IE=10mA ;IC=0
Collector-emitter saturation voltage
IC=10A; IB=1A
3.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=5V
2.5
V
ICBO
Collector cut-off current
VCB=50V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=2A ; VCE=5V
40
hFE-2
DC current gain
IC=7A ; VCE=5V
15
Transition frequency
IC=2A ; VCE=5V
VCEsat
fT
‹
hFE-1 Classifications
R
Y
40-80
70-140
2
5
V
140
4
MHz
Inchange Semiconductor
Product Specification
2SC1079 2SC1080
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3