ISC 2SA756

Inchange Semiconductor
Product Specification
2SA756
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2SC1030
APPLICATIONS
·For audio amplifier power output
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-6
V
-6
A
50
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA756
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;RBE=∞
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ,IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ,IC=0
-6
V
Collector-emitter saturation voltage
IC=-5A; IB=-1A
-1.8
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
35
hFE-2
DC current gain
IC=-5A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
‹ hFE-1 Classifications
A
B
C
35-70
60-120
100-200
2
MIN
TYP.
MAX
UNIT
200
20
MHz
Inchange Semiconductor
Product Specification
2SA756
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3