ISC 2SC1447

Inchange Semiconductor
Product Specification
2SC1447
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
7
V
0.15
A
20
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1447
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=10μA ;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ;IC=0
7
V
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
2.0
V
ICBO
Collector cut-off current
VCB=250V;IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE
DC current gain
IC=50mA ; VCE=10V
Transition frequency
IC=10mA ; VCE=30V
VCEsat
fT
2
40
170
80
MHz
Inchange Semiconductor
Product Specification
2SC1447
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3